The number of transformers needed in isolated power semiconductor device gate driver circuits can be reduced by using a phase-switched carrier signal technique. This is combined with integrated magnetic techniques to further reduce the number of isolation elements required. A circuit is presented which uses only a single magnetic component to drive both the power semiconductor devices in a bridge leg circuit. Each device is provided with a local floating power supply and can be driven at any duty factor between 0% and 100%. Experimental waveforms are given and implementation is discussed
The present work proposes a solution for an isolated gate driver suitable for SiC MOSFETs. The drive...
With the use of the simplistic equivalent circuits, loss mechanism in conventional power MOSFET (Met...
Switching techniques have been continued to develop, including sinusoidal PWM, space vector PWM, cur...
The combined asymmetric half-bridge power converter topology is often used to drive switched relucta...
This paper describes in detail a novel concept for isolated gate drivers by combining the advantages...
A compact IGBT halfbridge driver module is presented. The driver is based on PCB embedded magnetics....
International audienceThis paper presents several innovative solutions in the view of transferring g...
This paper provides a complete circuit for a low-loss non-conventional power MOSFET or IGBT driver. ...
The number of transformers in isolated power device gate driver circuits may be reduced in bridge-le...
International audienceThis paper deals with the design and the implementation of an integrated gate ...
This paper presents a galvanically isolated gate-driver integrated circuit realized as an ASIC chips...
Traditional methods of isolated MOSFET/IGBT gate drive are presented, and their pros and cons assess...
Galvanic isolated gate drivers require a control signal as well as energy transmission from the cont...
Traditional methods of isolated MOSFET/IGBT gate drive are presented, and their pros and cons assess...
To unlock the full potential of fast switching GaN technology, monolithic integration of power circu...
The present work proposes a solution for an isolated gate driver suitable for SiC MOSFETs. The drive...
With the use of the simplistic equivalent circuits, loss mechanism in conventional power MOSFET (Met...
Switching techniques have been continued to develop, including sinusoidal PWM, space vector PWM, cur...
The combined asymmetric half-bridge power converter topology is often used to drive switched relucta...
This paper describes in detail a novel concept for isolated gate drivers by combining the advantages...
A compact IGBT halfbridge driver module is presented. The driver is based on PCB embedded magnetics....
International audienceThis paper presents several innovative solutions in the view of transferring g...
This paper provides a complete circuit for a low-loss non-conventional power MOSFET or IGBT driver. ...
The number of transformers in isolated power device gate driver circuits may be reduced in bridge-le...
International audienceThis paper deals with the design and the implementation of an integrated gate ...
This paper presents a galvanically isolated gate-driver integrated circuit realized as an ASIC chips...
Traditional methods of isolated MOSFET/IGBT gate drive are presented, and their pros and cons assess...
Galvanic isolated gate drivers require a control signal as well as energy transmission from the cont...
Traditional methods of isolated MOSFET/IGBT gate drive are presented, and their pros and cons assess...
To unlock the full potential of fast switching GaN technology, monolithic integration of power circu...
The present work proposes a solution for an isolated gate driver suitable for SiC MOSFETs. The drive...
With the use of the simplistic equivalent circuits, loss mechanism in conventional power MOSFET (Met...
Switching techniques have been continued to develop, including sinusoidal PWM, space vector PWM, cur...