The optical properties of ternary chalcopyrite AgGaTe2 were studied by photoreflectance spectorscopy (PR). Due to the optimal direct energy gap and high absorption coefficient AgGaTe2 is a promising material for solar energy conversion. Single crystals used in this work were grown by the vertical Bridgman technique. The PR temperature dependent spectra were measured in the range of 25–300 K. At room temperature two energy gaps in AgGaTe2 were detected: and , with temperature coefficients /dT=−2.1×10−4 eV/K and /dT=−3.4×10−4 eV/K. At low temperature (T=25 K) these bandgap energies were and . Temperature dependence of bandgap energies is maximum at about T=90 K
Single crystals of AgGaS2 and AgGaTe2 were grown, using the Bridgman technique and the traveling hea...
The polycrystalline charges were successfully synthesized from high purity elemental starting materi...
Spectral features of polycrystalline Ag2GeS3 samples synthesized from high-purity elements (at least...
The optical properties of ternary chalcopyrite AgGaTe2 were studied by photoreflectance spectorscopy...
Silver thiogallate (AgGaS2) is a ternary semiconductor which crystallizes in the chalcopyrite struct...
Thin films of chalcopyrite AgGaSe2 have been successfully grown on glass and glass molybdenum substr...
Optical examination of a chaocogenide compound AgAlS2 which can spontaneously transfer to a AgAlO2 o...
The aim of this study is to understand the structural, optical and photo-electrical properties of th...
Theoretical and experimental studies of the AgxGaxGe1-xSe2 (x = 0.333, 0.250, 0.200, 0.167) single c...
Band edge property of whole series Cu(AlxIn1-x)S2 (0 x 1) chalcopyrite crystals has been character...
Abstract Due to its high absorption coefficient and close to optimal bandgap energy, AgGaTe 2 is a p...
An infrared (IR) nonlinear optical (NLO) material, Ag3Ga3SiSe8, has been synthesized for the first t...
In this study, AgGaSe2 (AGS) thin films were formed onto cleaned glass substrates by using the stack...
Reflectance measurements have been made on an artificial plane surface cut from oriented single crys...
The Silver Gallium Sulfide (AgGaS2) ternary compound is a wide bandgap semiconductor (about 2.7 eV) ...
Single crystals of AgGaS2 and AgGaTe2 were grown, using the Bridgman technique and the traveling hea...
The polycrystalline charges were successfully synthesized from high purity elemental starting materi...
Spectral features of polycrystalline Ag2GeS3 samples synthesized from high-purity elements (at least...
The optical properties of ternary chalcopyrite AgGaTe2 were studied by photoreflectance spectorscopy...
Silver thiogallate (AgGaS2) is a ternary semiconductor which crystallizes in the chalcopyrite struct...
Thin films of chalcopyrite AgGaSe2 have been successfully grown on glass and glass molybdenum substr...
Optical examination of a chaocogenide compound AgAlS2 which can spontaneously transfer to a AgAlO2 o...
The aim of this study is to understand the structural, optical and photo-electrical properties of th...
Theoretical and experimental studies of the AgxGaxGe1-xSe2 (x = 0.333, 0.250, 0.200, 0.167) single c...
Band edge property of whole series Cu(AlxIn1-x)S2 (0 x 1) chalcopyrite crystals has been character...
Abstract Due to its high absorption coefficient and close to optimal bandgap energy, AgGaTe 2 is a p...
An infrared (IR) nonlinear optical (NLO) material, Ag3Ga3SiSe8, has been synthesized for the first t...
In this study, AgGaSe2 (AGS) thin films were formed onto cleaned glass substrates by using the stack...
Reflectance measurements have been made on an artificial plane surface cut from oriented single crys...
The Silver Gallium Sulfide (AgGaS2) ternary compound is a wide bandgap semiconductor (about 2.7 eV) ...
Single crystals of AgGaS2 and AgGaTe2 were grown, using the Bridgman technique and the traveling hea...
The polycrystalline charges were successfully synthesized from high purity elemental starting materi...
Spectral features of polycrystalline Ag2GeS3 samples synthesized from high-purity elements (at least...