Local structure of luminescent InGaN alloys
- Kachkanov, V.
- O'Donnell, K. P.
- Martin, R. W.
- Mosselmans, J. F. W.
- Pereira, S.
DOIAbstract
Comparative Ga and In K-edge extended x-ray absorption fine structure studies provide the first direct evidence of an inequality of mean In-Ga and Ga-In next-nearest neighbor separations in InGaN alloys. The degree of inequality increases with decreasing InN fraction x in the range accessible to extended x-ray absorption fine structure analysis of alloys (0.9 <x <0.1). Its concurrence with an increase of luminescence efficiency in this composition range suggests that the breakdown of In/Ga randomness in InGaN is correlated with efficient radiative recombination in blue-green light emitting devices
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