The second order nonlinear coefficient (d36) of the narrow band gap semiconductor, mercury cadmium telluride (MCT), is measured. Because MCT is strongly absorbing at a 1.06 μm wavelength, the measurement was performed by comparing the second harmonic intensity reflected from the material surface to the second harmonic intensity measured for a quartz sample in transmission. The analysis depends on the derivation of comparable expressions for the reflected and transmitted intensities. Using this approach a value of d36=350±40 pm/V is obtained, a value much larger than those reported for similar zinc-blende type materials. The large magnitude of the MCT d36 is attributed to an electronic resonance enhancement
Several methods have been developed and used to characterize the narrow gap semiconductors Hg^_xCdxT...
Second harmonic generation, created by nanosecond Nd : YAG laser pulses at 1.064 µm with relatively ...
International audienceThe relationships of the wavelength dependence of both the electro-optic and s...
The second order nonlinear coefficient (d36) of the narrow band gap semiconductor, mercury cadmium t...
Reflection second harmonic generation is employed to examine the surfaces of epitaxial layers of Cdx...
We have characterized the second-order optical nonlinear response of II-VI semiconductor ternary com...
We have measured the absolute values of the second-harmonic generation (SHG) coefficient |d| for the...
Second-harmonic (SH) rotational anisotropy measurements performed on epitaxial Cdx Hg1−x Te (CMT) la...
A mathematical model for the relationship between the output voltage and incident radiation of the i...
We have systematically characterized the second harmonic generation efficiency of Te-based binary an...
A mathematical model for the relationship between the output voltage and incident radiation of the i...
High electro-optic figure of merit n03r41 and the absence of natural birefringence make semi-insulat...
Several methods have been developed and used to characterize the narrow gap semiconductors Hg^_xCdxT...
Second harmonic generation, created by nanosecond Nd : YAG laser pulses at 1.064 µm with relatively ...
International audienceThe relationships of the wavelength dependence of both the electro-optic and s...
The second order nonlinear coefficient (d36) of the narrow band gap semiconductor, mercury cadmium t...
Reflection second harmonic generation is employed to examine the surfaces of epitaxial layers of Cdx...
We have characterized the second-order optical nonlinear response of II-VI semiconductor ternary com...
We have measured the absolute values of the second-harmonic generation (SHG) coefficient |d| for the...
Second-harmonic (SH) rotational anisotropy measurements performed on epitaxial Cdx Hg1−x Te (CMT) la...
A mathematical model for the relationship between the output voltage and incident radiation of the i...
We have systematically characterized the second harmonic generation efficiency of Te-based binary an...
A mathematical model for the relationship between the output voltage and incident radiation of the i...
High electro-optic figure of merit n03r41 and the absence of natural birefringence make semi-insulat...
Several methods have been developed and used to characterize the narrow gap semiconductors Hg^_xCdxT...
Second harmonic generation, created by nanosecond Nd : YAG laser pulses at 1.064 µm with relatively ...
International audienceThe relationships of the wavelength dependence of both the electro-optic and s...