After a decade of intensive research on GaInNAs(Sb) on GaAs alloys, this paper summarizes some of the key properties of these III-V alloys and presents current progress in their exploitation in a variety of surface-normal operating devices such as Vertical (External)-Cavity Surface-Emitting Lasers (V(E)CSELs) and SEmiconductor Saturable Absorber Mirrors (SESAMs)
We report the use of GaInNAs/GaAs material system for a range of 1.3 μm vertical-cavity devices name...
We report the use of GaInNAs/GaAs material system for a range of 1.3 μm vertical-cavity devices name...
This thesis focuses on the theoretical analysis of GalnNAs alloys for use in optoelectronic devices....
After a decade of intensive research on GaInNAs(Sb) on GaAs alloys, this paper summarizes some of th...
After a decade of intensive research on GaInNAs(Sb) on GaAs alloys, this paper summarizes some of th...
After a decade of intensive research on GaInNAs(Sb) on GaAs alloys, this paper summarizes some of th...
After a decade of intensive research on GaInNAs(Sb) on GaAs alloys, this paper summarizes some of th...
The compatibility of GaInNAs/GaAs active regions with AlGaAs Bragg mirror technology opens up a rang...
The compatibility of GaInNAs/GaAs active regions with AlGaAs Bragg mirror technology opens up a rang...
The compatibility of GaInNAs/GaAs active regions with AlGaAs Bragg mirror technology opens up a rang...
The compatibility of GaInNAs/GaAs active regions with AlGaAs Bragg mirror technology opens up a rang...
The compatibility of GaInNAs/GaAs active regions with AlGaAs Bragg mirror technology opens up a rang...
Since their introduction, GaInNAs(Sb) alloys have enabled the extension of the operation of GaAs-bas...
We report the use of GaInNAs/GaAs material system for a range of 1.3 μm vertical-cavity devices name...
We report the use of GaInNAs/GaAs material system for a range of 1.3 μm vertical-cavity devices name...
We report the use of GaInNAs/GaAs material system for a range of 1.3 μm vertical-cavity devices name...
We report the use of GaInNAs/GaAs material system for a range of 1.3 μm vertical-cavity devices name...
This thesis focuses on the theoretical analysis of GalnNAs alloys for use in optoelectronic devices....
After a decade of intensive research on GaInNAs(Sb) on GaAs alloys, this paper summarizes some of th...
After a decade of intensive research on GaInNAs(Sb) on GaAs alloys, this paper summarizes some of th...
After a decade of intensive research on GaInNAs(Sb) on GaAs alloys, this paper summarizes some of th...
After a decade of intensive research on GaInNAs(Sb) on GaAs alloys, this paper summarizes some of th...
The compatibility of GaInNAs/GaAs active regions with AlGaAs Bragg mirror technology opens up a rang...
The compatibility of GaInNAs/GaAs active regions with AlGaAs Bragg mirror technology opens up a rang...
The compatibility of GaInNAs/GaAs active regions with AlGaAs Bragg mirror technology opens up a rang...
The compatibility of GaInNAs/GaAs active regions with AlGaAs Bragg mirror technology opens up a rang...
The compatibility of GaInNAs/GaAs active regions with AlGaAs Bragg mirror technology opens up a rang...
Since their introduction, GaInNAs(Sb) alloys have enabled the extension of the operation of GaAs-bas...
We report the use of GaInNAs/GaAs material system for a range of 1.3 μm vertical-cavity devices name...
We report the use of GaInNAs/GaAs material system for a range of 1.3 μm vertical-cavity devices name...
We report the use of GaInNAs/GaAs material system for a range of 1.3 μm vertical-cavity devices name...
We report the use of GaInNAs/GaAs material system for a range of 1.3 μm vertical-cavity devices name...
This thesis focuses on the theoretical analysis of GalnNAs alloys for use in optoelectronic devices....