High performance, GaSb-based, optically-pumped semiconductor disk lasers (invited)

In recent years, semiconductor lasers based on the III-V compound semiconductor material system (AlGaIn)(AsSb), emitting in the 1.8 μm to 3.0 μm wavelength regime (in the following abbreviated as 2.Xμm) have reached a considerable level of maturity regarding spectral coverage, output power and device reliability. For the majority of the potential applications of these GaSb-based lasers, output power is not the only criterion, but the combination of high output power and good beam quality, i.e. high brightness, is the ultimate goal