Add to ORKGThe compatibility of GaInNAs/GaAs active regions with AlGaAs Bragg mirror technology opens up a range of surface-normal device formats for the spectral region around 1.3 µm. The authors report recent progress on the development of diode-pumped vertical external-cavity surface emitting lasers (VECSELs) and vertical cavity semiconductor optical amplifiers (VCSOAs) based on this technology. Pertinent performance characteristics are reported for GaInNAs 1.3-µm VECSELs capillary-bonded to diamond heatspreader platelets
We report the use of GaInNAs/GaAs material system for a range of 1.3 μm vertical-cavity devices name...
We report the use of GaInNAs/GaAs material system for a range of 1.3 μm vertical-cavity devices name...
We report the use of GaInNAs/GaAs material system for a range of 1.3 μm vertical-cavity devices name...
The compatibility of GaInNAs/GaAs active regions with AlGaAs Bragg mirror technology opens up a rang...
The compatibility of GaInNAs/GaAs active regions with AlGaAs Bragg mirror technology opens up a rang...
The compatibility of GaInNAs/GaAs active regions with AlGaAs Bragg mirror technology opens up a rang...
The compatibility of GaInNAs/GaAs active regions with AlGaAs Bragg mirror technology opens up a rang...
After a decade of intensive research on GaInNAs(Sb) on GaAs alloys, this paper summarizes some of th...
After a decade of intensive research on GaInNAs(Sb) on GaAs alloys, this paper summarizes some of th...
After a decade of intensive research on GaInNAs(Sb) on GaAs alloys, this paper summarizes some of th...
After a decade of intensive research on GaInNAs(Sb) on GaAs alloys, this paper summarizes some of th...
After a decade of intensive research on GaInNAs(Sb) on GaAs alloys, this paper summarizes some of th...
We report the use of GaInNAs/GaAs material system for a range of 1.3 μm vertical-cavity devices name...
We report the use of GaInNAs/GaAs material system for a range of 1.3 μm vertical-cavity devices name...
We report the use of GaInNAs/GaAs material system for a range of 1.3 μm vertical-cavity devices name...
We report the use of GaInNAs/GaAs material system for a range of 1.3 μm vertical-cavity devices name...
We report the use of GaInNAs/GaAs material system for a range of 1.3 μm vertical-cavity devices name...
We report the use of GaInNAs/GaAs material system for a range of 1.3 μm vertical-cavity devices name...
The compatibility of GaInNAs/GaAs active regions with AlGaAs Bragg mirror technology opens up a rang...
The compatibility of GaInNAs/GaAs active regions with AlGaAs Bragg mirror technology opens up a rang...
The compatibility of GaInNAs/GaAs active regions with AlGaAs Bragg mirror technology opens up a rang...
The compatibility of GaInNAs/GaAs active regions with AlGaAs Bragg mirror technology opens up a rang...
After a decade of intensive research on GaInNAs(Sb) on GaAs alloys, this paper summarizes some of th...
After a decade of intensive research on GaInNAs(Sb) on GaAs alloys, this paper summarizes some of th...
After a decade of intensive research on GaInNAs(Sb) on GaAs alloys, this paper summarizes some of th...
After a decade of intensive research on GaInNAs(Sb) on GaAs alloys, this paper summarizes some of th...
After a decade of intensive research on GaInNAs(Sb) on GaAs alloys, this paper summarizes some of th...
We report the use of GaInNAs/GaAs material system for a range of 1.3 μm vertical-cavity devices name...
We report the use of GaInNAs/GaAs material system for a range of 1.3 μm vertical-cavity devices name...
We report the use of GaInNAs/GaAs material system for a range of 1.3 μm vertical-cavity devices name...
We report the use of GaInNAs/GaAs material system for a range of 1.3 μm vertical-cavity devices name...
We report the use of GaInNAs/GaAs material system for a range of 1.3 μm vertical-cavity devices name...
We report the use of GaInNAs/GaAs material system for a range of 1.3 μm vertical-cavity devices name...