Design of Trench Termination for High Voltage Devices

The 22nd International Symposium on Power Semiconductor Devices & Ics (ISPSD2010), 6月6日-10日, 2010年, International Conference Center Hiroshima, Hiroshima, JapanTrench termination technique has been attractive for high voltage power devices design with the possibilities of reducing the chip area and improves the blocking voltage to the level of ideal one, by reducing the termination length and maintaining the ideal electric field uniformity near the chip edge. The authors unveil, for the first time, that positive charges due to the holes accumulated in the trench side wall terminate the high electric field and show the robust design for the trench termination against the avalanche phenomena