Unveiling charge carrier dynamics of GaN-based materials through a combined Cathodoluminescence and Kelvin Probe Force Microscopy under variable illumination protocol

isbn: 978-3-9819376-8-8International audienceIn this study, we developed a method combining cathodoluminescence (CL) and KPFM under variableillumination to study GaN-based materials, by showing two case studies: n.i.d. GaN-on-Si andGaN/InGaN MQW mesa structures. These two techniques were chosen for their complementarity (CLhas access to the radiative recombination and KPFM to radiative and non-radiative recombination) andtheir nanometric spatial resolution (well suited to study dislocations).Étude de matériaux à base de GaN par cathodoluminescence et microscopie à force de sonde Kelvin sous d'illumination variabl