455/610-GHz fT/fMAX InP DHBT technology with demonstration of a beyond-110-GHz-bandwidth large-swing PAM-4 2:1 AMUX-driver

International audienceWe report on an Indium Phosphide (InP) double heterojunction bipolar transistor (DHBT) technology for integrated circuit design and fabrication. The 0.4×5 µm² DHBT devices exhibit a 455-GHz fT and a 610-GHz fMAX, with a 4 V common-emitter breakdown voltage, the BVCE0, and a peak current gain β of 25. This enabled state-of-the-art 2:1 Analog multiplexer (AMUX)-driver results with beyond-110-GHz bandwidth and 2-Vppd PAM-4 swing at 100 GBd