Add to ORKGSi-doped and non-doped GaAs crystals are heat-treated for 72 hours at 1000℃ under 600 Torr arrsenic pressure. Arrow-shaped etch figures, which have never been found on as-grown Si-doped GaAs crystals, are formed on As (1^^-1^^-1^^-) surface of heat-treated Si-doped GaAs crystal, but these etch figures did not appear on non-doped case. The arrow-shaped etch figure corresponds to a two-dimensional defect which is formed by dislocation clibming. The dislocation clibming mechanism and the formation mechanism of the two-dimensional defect are discussed precisely and a model of the formation is proposed. which concerns with Si-impurities and As interstitials
4 pagesWe present the characterization of crystal defects in GaAs layers grown on silicon substrates...
The defect patterns in GaAs crystal grown using liquid encapsulated Czochralski and gradient freeze ...
Our understanding of the causal relationship between material parameters and GaAs FET threshold volt...
A formation mechanism of two-dimensional defects which are produced in a Si-doped GaAs crystal durin...
Test pieces of GaAs were cut from Czochralski grown wafers. Prior to deformation the dislocation co...
Test pieces of GaAs were cut from Czochralski grown wafers. Prior to deformation the dislocation co...
The influences of arsenic interstitials and dislocations on the lattice parameters of undoped semi-i...
The crystal quality improvement by electrical or isoelectronic doping of L.E.C. grown GaAs crystals ...
The crystal quality improvement by electrical or isoelectronic doping of L.E.C. grown GaAs crystals ...
The crystal quality improvement by electrical or isoelectronic doping of L.E.C. grown GaAs crystals ...
The dislocations and precipitates in SI-GaAs single crystals are revealed by ultrasonic-aided Abraha...
Dislocation structures in In-doped and undoped GaAs single crystals deformed at 700-1100°C have been...
Dislocation structures in In-doped and undoped GaAs single crystals deformed at 700-1100°C have been...
This work is concerned with the study and explanation of a peculiar phenomenon that can be observed ...
The interactions of dislocations with impurities and/or point defects in GaAs and Si crystals with v...
4 pagesWe present the characterization of crystal defects in GaAs layers grown on silicon substrates...
The defect patterns in GaAs crystal grown using liquid encapsulated Czochralski and gradient freeze ...
Our understanding of the causal relationship between material parameters and GaAs FET threshold volt...
A formation mechanism of two-dimensional defects which are produced in a Si-doped GaAs crystal durin...
Test pieces of GaAs were cut from Czochralski grown wafers. Prior to deformation the dislocation co...
Test pieces of GaAs were cut from Czochralski grown wafers. Prior to deformation the dislocation co...
The influences of arsenic interstitials and dislocations on the lattice parameters of undoped semi-i...
The crystal quality improvement by electrical or isoelectronic doping of L.E.C. grown GaAs crystals ...
The crystal quality improvement by electrical or isoelectronic doping of L.E.C. grown GaAs crystals ...
The crystal quality improvement by electrical or isoelectronic doping of L.E.C. grown GaAs crystals ...
The dislocations and precipitates in SI-GaAs single crystals are revealed by ultrasonic-aided Abraha...
Dislocation structures in In-doped and undoped GaAs single crystals deformed at 700-1100°C have been...
Dislocation structures in In-doped and undoped GaAs single crystals deformed at 700-1100°C have been...
This work is concerned with the study and explanation of a peculiar phenomenon that can be observed ...
The interactions of dislocations with impurities and/or point defects in GaAs and Si crystals with v...
4 pagesWe present the characterization of crystal defects in GaAs layers grown on silicon substrates...
The defect patterns in GaAs crystal grown using liquid encapsulated Czochralski and gradient freeze ...
Our understanding of the causal relationship between material parameters and GaAs FET threshold volt...