Experimental study of Cu_2O thin film deposited by reactive ion plating method

指導教員: 埼玉大学大学院理工学研究科准教授 長谷川靖洋Copper oxide film for a Peltier element was deposited on glass substrate by reactive ion plating method to reduce the resistivity, which is much higher than other thermoelectric material. The film was characterized by X-ray diffraction, and it was shown that only Cu_2O phase could be synthesized by adjusting of oxygen flow rate. The crystal lattice of Cu_2O film expanded approximately 1 %, because energy when fabricating the thin film was not enough. Then expansion of the crystal lattice was eliminated by annealing processing in air at approximately 350℃. As a result, Seebeck coefficient was increased, and resistivity was decreased. In addition, Cu_2O phase of the films changed from Cu_2O phase to Cu_2O + CuO phase by the annealing processing in air at approximately 350 - 400 ℃. It was found that annealing processing in air at approximately 300 - 350 ℃ is necessary to use the Cu_2O fim as Peltier element