A method for reducing the computation needs of modellingcomplete fabrication processes for VLSI devices on personal computers in 3 dimensions, a treatment of equitations of basic physical processes, such as diffusion, oxidation, implantation, etching and deposition is presented. In the paper we will describe the structure of the TEDI (TechnologyDialog) program, the main formulas and principles of the models and some examples of 3D process simulation. The third part of the "TEDI" program (creating a set of control parameters, automatic simulation and graphical output of results) provides flexible possibilities of studyingthe connections between 1D, 2D and 3D simulations
The article discusses two approaches to modeling signals and processes: the method of filter constru...
Numerical simulation of processes has shown to be an important tool for development in the fields of...
During the last few years, process simulation has become a valuable tool for the optimization of sem...
A method for reducing the computation needs of modellingcomplete fabrication processes for VLSI devi...
A program for the three-dimensional (3D) simulation of layer depositionhas been developed. It is bas...
In contrast to the early times of simulation where the tools were dedicated either to the simulation...
With shrinking dimensions and growing complexity of advanced ULSI devices three-dimensional effects ...
This paper presents a new 3D simulator, an extended version of our previous developed 2D simulator [...
A program for the three-dimensional (3D) simulation of layer deposition processes has been developed...
AbstractSimulations of the productive processes are one of the most important outputs of digital fac...
MEMS designers often use numerical simulation for detecting errors in the mask layout. Numerical sim...
In VLSI development process simulation is needed to understand the interaction between successive pr...
Our user oriented process simulation program called APT (Advenced Program for Tecnhology) has been i...
A new improved comprehensive 3D surface simulator is presented for different MEMS processes. The sim...
In 3D computer graphics, 3D modeling is the process of developing a mathematical representation of a...
The article discusses two approaches to modeling signals and processes: the method of filter constru...
Numerical simulation of processes has shown to be an important tool for development in the fields of...
During the last few years, process simulation has become a valuable tool for the optimization of sem...
A method for reducing the computation needs of modellingcomplete fabrication processes for VLSI devi...
A program for the three-dimensional (3D) simulation of layer depositionhas been developed. It is bas...
In contrast to the early times of simulation where the tools were dedicated either to the simulation...
With shrinking dimensions and growing complexity of advanced ULSI devices three-dimensional effects ...
This paper presents a new 3D simulator, an extended version of our previous developed 2D simulator [...
A program for the three-dimensional (3D) simulation of layer deposition processes has been developed...
AbstractSimulations of the productive processes are one of the most important outputs of digital fac...
MEMS designers often use numerical simulation for detecting errors in the mask layout. Numerical sim...
In VLSI development process simulation is needed to understand the interaction between successive pr...
Our user oriented process simulation program called APT (Advenced Program for Tecnhology) has been i...
A new improved comprehensive 3D surface simulator is presented for different MEMS processes. The sim...
In 3D computer graphics, 3D modeling is the process of developing a mathematical representation of a...
The article discusses two approaches to modeling signals and processes: the method of filter constru...
Numerical simulation of processes has shown to be an important tool for development in the fields of...
During the last few years, process simulation has become a valuable tool for the optimization of sem...