The Performance of Single and Bilayer Graphene: The Initial Study

The tunable band gap has made graphene a promising material for the construction of next-generation electronic devices. In this paper, the electronic and transport characteristics of single and bilayer graphene are investigated using Extended-Huckel and Non-Equilibrium Green’s Functional (NEGF) simulations. Results from the simulations showed that the band gap opening depends on the arrangement and the layers of the graphene up to 1.701 eV and 1.854 eV for AA-stacked and AB-stacked bilayer graphene respectively. The conductance, thermal conductance, and the I-V curves changed significantly depending on the transmission spectrum of the graphene sheet or graphene device itself. The I – V curve shows p-type semiconductor behavior. Lastly, the bilayer graphene shows excellent performance compared to the single-layer device with the AA device showing superior performance than AB by 2.45%