The effect of Sb addition on the morphology of self-catalyzed InAsSb nanowires (NWs) has been systematically investigated. InAs NWs were grown by molecular beam epitaxy with and without antimony (Sb) flux. It is demonstrated that trace amounts of Sb flux are capable of tuning the geometry of NWs, i.e., enhancing lateral growth and suppressing axial growth. We attribute this behavior to the surfactant effect of Sb which results in modifications to the kinetic and thermodynamic processes. A thermodynamic mechanism that accounts for Sb segregation in InAsSb NWs is also elucidated. This study opens a new route towards precisely controlled NW geometries by means of Sb addition
III-V ternary nanowires are interesting due to the possibility of modulating their physical and mate...
Two growth techniques - antimony exposure and graded growth, were proposed to achieve the control ov...
Due to their unique physical and material properties, III-Sb nanowires are considered good candidate...
The effect of Sb addition on the morphology of self-catalyzed InAsSb nanowires (NWs) has been system...
The effect of Sb addition on the morphology of self-catalyzed InAsSb nanowires (NWs) is systematical...
For the first time, we report a complete control of crystal structure in InAs1–xSbx NWs by tuning th...
For the first time, we report a complete control of crystal structure in InAs1–xSbx NWs by tuning th...
Ternary semiconductor nanowire arrays enable scalable fabrication of nano-optoelectronic devices wit...
We demonstrate metalorganic vapor phase epitaxy of InAs1-xSbx nanowires (x=0.08-0.77) for applicatio...
We report the self-catalysed growth of InAs1-xSbx nanowires directly on bare Si substrates. Vertical...
We present a study on the growth of InAs1-xSbx alloy nanowires directly on Si (111) substrates via a...
We report the growth of InAs/InAs1-xSbx single and double heterostructured nanowires by Au-assisted ...
For the first time, we report a complete control of crystal structure in InAs<sub>1–<i>x</i></sub>Sb...
We report the self-catalysed growth of InAs1 − xSbx nanowires directly on bare Si substrates. Vertic...
The influence of using a Bi surfactant during the growth of InAsSb on the composition was examined, ...
III-V ternary nanowires are interesting due to the possibility of modulating their physical and mate...
Two growth techniques - antimony exposure and graded growth, were proposed to achieve the control ov...
Due to their unique physical and material properties, III-Sb nanowires are considered good candidate...
The effect of Sb addition on the morphology of self-catalyzed InAsSb nanowires (NWs) has been system...
The effect of Sb addition on the morphology of self-catalyzed InAsSb nanowires (NWs) is systematical...
For the first time, we report a complete control of crystal structure in InAs1–xSbx NWs by tuning th...
For the first time, we report a complete control of crystal structure in InAs1–xSbx NWs by tuning th...
Ternary semiconductor nanowire arrays enable scalable fabrication of nano-optoelectronic devices wit...
We demonstrate metalorganic vapor phase epitaxy of InAs1-xSbx nanowires (x=0.08-0.77) for applicatio...
We report the self-catalysed growth of InAs1-xSbx nanowires directly on bare Si substrates. Vertical...
We present a study on the growth of InAs1-xSbx alloy nanowires directly on Si (111) substrates via a...
We report the growth of InAs/InAs1-xSbx single and double heterostructured nanowires by Au-assisted ...
For the first time, we report a complete control of crystal structure in InAs<sub>1–<i>x</i></sub>Sb...
We report the self-catalysed growth of InAs1 − xSbx nanowires directly on bare Si substrates. Vertic...
The influence of using a Bi surfactant during the growth of InAsSb on the composition was examined, ...
III-V ternary nanowires are interesting due to the possibility of modulating their physical and mate...
Two growth techniques - antimony exposure and graded growth, were proposed to achieve the control ov...
Due to their unique physical and material properties, III-Sb nanowires are considered good candidate...