We present a wideband GaN MMIC power amplifier, designed to be the unit cell of a balanced module. A wideband output matching network, based on a two-section transformer, is adopted to compensate for reactive effects over the entire bandwidth. A reactive network is inserted at the input for gain equalization at compression; the resulting input reflectance will be controlled by the balanced configuration. According to simulations the MMIC shows, in the 7-14GHz band, power gain ranging from 6.8 to 8 dB, output power always >; 5W, drain efficiency between 43% and 59% at power saturation. Preliminary measurements on the first run have comparable gain and slightly lower output power on a narrower bandwdith; the output efficiency goal is, however...
25 pagesInternational audienceIn this paper, the designs and experimental performances of wideband (...
This paper presents an X-band GaN HEMT power amplifier with a third harmonic-tuned circuit for a hig...
The development of two GaN MMIC power amplifiers is reported. The amplifiers are processed in the Al...
We present a wideband GaN MMIC power amplifier, designed to be the unit cell of a balanced module. A...
This paper presents the design approach for a compact, single-stage, wideband MMIC power amplifier. ...
This work presents a balanced GaN-based power amplifier targeting the entire V-band frequency range....
A broadband GaN MMIC power amplifier (PA) with compact dimensions of 1.94 × 0.83 mm2 is presented fo...
The monolithic microwave integrated circuit (MMIC) power amplifiers serve an essential and critical ...
The present manuscript details a wideband high power amplifier design, based on a 5-mm GaN power bar...
This contribution reports the design of an X-band MMIC power amplifier in a 0.25 um GaN technology, ...
This paper presents the design approach for a compact, single-stage, wideband MMIC power amplifier. ...
This paper describes a balanced AlGaN/GaN HEMT single-stage power amplifier demonstrator for X-band ...
International audienceIn this paper, the design and experimental results of a MIC Wideband (1-3GHz) ...
Two-stage reactively matched gain cells are applied to design a high-gain multi-octave distributed p...
A wideband and flat gain distributed power amplifier using a GaN high electron mobility (HEMT) trans...
25 pagesInternational audienceIn this paper, the designs and experimental performances of wideband (...
This paper presents an X-band GaN HEMT power amplifier with a third harmonic-tuned circuit for a hig...
The development of two GaN MMIC power amplifiers is reported. The amplifiers are processed in the Al...
We present a wideband GaN MMIC power amplifier, designed to be the unit cell of a balanced module. A...
This paper presents the design approach for a compact, single-stage, wideband MMIC power amplifier. ...
This work presents a balanced GaN-based power amplifier targeting the entire V-band frequency range....
A broadband GaN MMIC power amplifier (PA) with compact dimensions of 1.94 × 0.83 mm2 is presented fo...
The monolithic microwave integrated circuit (MMIC) power amplifiers serve an essential and critical ...
The present manuscript details a wideband high power amplifier design, based on a 5-mm GaN power bar...
This contribution reports the design of an X-band MMIC power amplifier in a 0.25 um GaN technology, ...
This paper presents the design approach for a compact, single-stage, wideband MMIC power amplifier. ...
This paper describes a balanced AlGaN/GaN HEMT single-stage power amplifier demonstrator for X-band ...
International audienceIn this paper, the design and experimental results of a MIC Wideband (1-3GHz) ...
Two-stage reactively matched gain cells are applied to design a high-gain multi-octave distributed p...
A wideband and flat gain distributed power amplifier using a GaN high electron mobility (HEMT) trans...
25 pagesInternational audienceIn this paper, the designs and experimental performances of wideband (...
This paper presents an X-band GaN HEMT power amplifier with a third harmonic-tuned circuit for a hig...
The development of two GaN MMIC power amplifiers is reported. The amplifiers are processed in the Al...