We present results on integrated photonic devices fabricated using InGaAs quantum-dots. Selective-area MOCVD is used to tune the bandgap of epitaxial layers for device integration
The age of the Internet brings unprecedented challenges to the communication networks. The ever non-...
InGaAs quantum dots (QDs) and nanowires have been grown on GaAs by metal-organic chemical vapour dep...
Abstract: An InGaAs quantum-dot (QD) laser integrated with a low-loss waveguide is demonstrated. Se...
We present results on integrated photonic devices fabricated using InGaAs quantum-dots. Selective-ar...
We present results on integrated photonic devices fabricated using InGaAs quantum-dots. Selective-ar...
We demonstrate that selective-area-epitaxy can be used to selectively tune the properties of InGaAs ...
We review our results on integrated photonic devices fabricated using InGaAs quantum-dots. Selective...
We present the design and operation of an InGaAs quantumdot laser integrated with a passive waveguid...
The results of nucleation of InGaAs and InAs quantum dots by selective area epitaxy are presented. B...
The demand of bandwidth capacity is rising exponentially in recent years due to the spread of high-s...
Quantum dot-based integrated optoelectronic devices using two different techniques are reported. Sel...
Selective growth of InGaAsInGaAs quantum dots on GaAsGaAs is reported. It is demonstrated that selec...
The age of the Internet brings unprecedented challenges to the communication networks. The ever non-...
InGaAs quantum dots (QDs) and nanowires have been grown on GaAs by metal-organic chemical vapour dep...
Abstract: An InGaAs quantum-dot (QD) laser integrated with a low-loss waveguide is demonstrated. Se...
We present results on integrated photonic devices fabricated using InGaAs quantum-dots. Selective-ar...
We present results on integrated photonic devices fabricated using InGaAs quantum-dots. Selective-ar...
We demonstrate that selective-area-epitaxy can be used to selectively tune the properties of InGaAs ...
We review our results on integrated photonic devices fabricated using InGaAs quantum-dots. Selective...
We present the design and operation of an InGaAs quantumdot laser integrated with a passive waveguid...
The results of nucleation of InGaAs and InAs quantum dots by selective area epitaxy are presented. B...
The demand of bandwidth capacity is rising exponentially in recent years due to the spread of high-s...
Quantum dot-based integrated optoelectronic devices using two different techniques are reported. Sel...
Selective growth of InGaAsInGaAs quantum dots on GaAsGaAs is reported. It is demonstrated that selec...
The age of the Internet brings unprecedented challenges to the communication networks. The ever non-...
InGaAs quantum dots (QDs) and nanowires have been grown on GaAs by metal-organic chemical vapour dep...
Abstract: An InGaAs quantum-dot (QD) laser integrated with a low-loss waveguide is demonstrated. Se...
DOI
Add to ORKG