The Schottky barrier height for the CoSi2/Si(111) interface is calculated using a tight-binding theory. It is found that the barrier height is 0.55 eV for the model with fivefold-coordinated Co atoms at the interface and 0.13 eV for the model with eightfold-coordinated Co atoms at the interfac
The Schottky barrier height of Cr-Si and CrSi2-Si junctions for both n-and p-type samples has been m...
The self-consistent electronic properties of the epitaxial Si(111)-NiSi2(111) interfaces are compute...
The description of the electronic structure of an interface between two materials is one of the main...
The Schottky barrier height for the CoSi2/Si(111) interface is calculated using a tight-binding theo...
The authors have calculated the Schottky barrier heights for the type A and type B NiSi2-Si(111) int...
Schottky barriers at metal-semiconductor interfaces have attracted much interest in recent years. On...
The morphology and the surface and interface structure of flat CoSi2 films (thickness 2 Si-Co-Si tri...
The authors have calculated the pressure coefficients of the silicon band gap and the Schottky barri...
Self-consistent electronic structure calculations have been performed on the Sn/Si(111) (√3 × √3) an...
Abstract The densities of states and the two-dimensional band structure provide a detailed investiga...
Nickel monosilicide (NiSi) and Platinum monosilicide (PtSi) are highly promising for applications as...
The Schottky barrier height of Cr-Si and CrSi2-Si junctions for both n-and p-type samples has been m...
The self-consistent electronic properties of the epitaxial Si(111)-NiSi2(111) interfaces are compute...
The description of the electronic structure of an interface between two materials is one of the main...
The Schottky barrier height for the CoSi2/Si(111) interface is calculated using a tight-binding theo...
The authors have calculated the Schottky barrier heights for the type A and type B NiSi2-Si(111) int...
Schottky barriers at metal-semiconductor interfaces have attracted much interest in recent years. On...
The morphology and the surface and interface structure of flat CoSi2 films (thickness 2 Si-Co-Si tri...
The authors have calculated the pressure coefficients of the silicon band gap and the Schottky barri...
Self-consistent electronic structure calculations have been performed on the Sn/Si(111) (√3 × √3) an...
Abstract The densities of states and the two-dimensional band structure provide a detailed investiga...
Nickel monosilicide (NiSi) and Platinum monosilicide (PtSi) are highly promising for applications as...
The Schottky barrier height of Cr-Si and CrSi2-Si junctions for both n-and p-type samples has been m...
The self-consistent electronic properties of the epitaxial Si(111)-NiSi2(111) interfaces are compute...
The description of the electronic structure of an interface between two materials is one of the main...
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