We show that the values of the observed barriers to electrical transport across semiconductor interfaces can be explained in terms of a natural line-up corrected by a potential drop determined by the amount of charge transfer across this interface. This electrical dipole, and hence the barrier, can be altered by the judicious use of interlayers at the interface
The problem of Fermi-level pinning at semiconductor-metal contacts is readdressed starting from firs...
Recently, Niederhausen et al. [Phys. Rev. B 86, 081411 R 2012 ] have reported on the energy level ...
The technique of photoelectron spectroscopy has contributed tremendously to our knowledge on the pro...
We show that the values of the observed barriers to electrical transport across semiconductor interf...
From the results of self-consistent calculations on semiconductor heterojunction structures it has b...
Interfaces between semiconductors and insulators, metals or other semiconductors play a crucial role...
A review of the phenomena associated with electrical barriers between metals, and insulators and sem...
We study how partial monolayers of molecular dipoles at semiconductor/metal interfaces can affect el...
A dipole-layer approach is adapted to describe the electrostatic potential and electronic transport ...
<span lang="EN-US" style="font-family: "Calibri","sans-serif"; font-size: 10.5pt...
We present studies of Al/n-GaAs(001) and Al/p-GaAs(001) diodes in which the Schottky barrier height ...
It has long been known that when a metal is placed in contact with a semiconductor a rectifying cont...
The rapidly developing field of organic electronics has stimulated intensive research into the funda...
Molecular control over charge transport across a metal/semiconductor interface persists even if ther...
This article describes the properties of semiconductors that are responsible for the operation of re...
The problem of Fermi-level pinning at semiconductor-metal contacts is readdressed starting from firs...
Recently, Niederhausen et al. [Phys. Rev. B 86, 081411 R 2012 ] have reported on the energy level ...
The technique of photoelectron spectroscopy has contributed tremendously to our knowledge on the pro...
We show that the values of the observed barriers to electrical transport across semiconductor interf...
From the results of self-consistent calculations on semiconductor heterojunction structures it has b...
Interfaces between semiconductors and insulators, metals or other semiconductors play a crucial role...
A review of the phenomena associated with electrical barriers between metals, and insulators and sem...
We study how partial monolayers of molecular dipoles at semiconductor/metal interfaces can affect el...
A dipole-layer approach is adapted to describe the electrostatic potential and electronic transport ...
<span lang="EN-US" style="font-family: "Calibri","sans-serif"; font-size: 10.5pt...
We present studies of Al/n-GaAs(001) and Al/p-GaAs(001) diodes in which the Schottky barrier height ...
It has long been known that when a metal is placed in contact with a semiconductor a rectifying cont...
The rapidly developing field of organic electronics has stimulated intensive research into the funda...
Molecular control over charge transport across a metal/semiconductor interface persists even if ther...
This article describes the properties of semiconductors that are responsible for the operation of re...
The problem of Fermi-level pinning at semiconductor-metal contacts is readdressed starting from firs...
Recently, Niederhausen et al. [Phys. Rev. B 86, 081411 R 2012 ] have reported on the energy level ...
The technique of photoelectron spectroscopy has contributed tremendously to our knowledge on the pro...
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