The gain dynamics in electrically-pumped InGaAs quantum dot amplifiers at 300 K is measured to be in the subpicosecond range for both ground and excited state transitions, promising for all-optical signal processing at >40 GHz repetition rates
We measured the gain dynamics at the ground-state transition in an electrically pumped InP/AlGaInP q...
We have compared the gain dynamics of the ground state excitonic transition between undoped and p-do...
Semiconductor optical amplifiers (SOAs) are important devices for optical communications being low-c...
The gain dynamics in electrically-pumped InGaAs quantum dot amplifiers at 300 K is measured to be in...
The ultrafast gain recovery dynamics of the first excited state (ES) is studied in an electrically p...
The ultrafast dynamics of gain and refractive index in an electrically pumped InAs-InGaAs quantum-do...
The gain and index dynamics of a QD amplifier operating at 1.55 mum are characterized via heterodyne...
We measured the gain dynamics at the ground-state transition in an electrically pumped InP/AlGaInP q...
We have compared the gain dynamics of the ground state excitonic transition between undoped and p-do...
Semiconductor optical amplifiers (SOAs) are important devices for optical communications being low-c...
The gain dynamics in electrically-pumped InGaAs quantum dot amplifiers at 300 K is measured to be in...
The ultrafast gain recovery dynamics of the first excited state (ES) is studied in an electrically p...
The ultrafast dynamics of gain and refractive index in an electrically pumped InAs-InGaAs quantum-do...
The gain and index dynamics of a QD amplifier operating at 1.55 mum are characterized via heterodyne...
We measured the gain dynamics at the ground-state transition in an electrically pumped InP/AlGaInP q...
We have compared the gain dynamics of the ground state excitonic transition between undoped and p-do...
Semiconductor optical amplifiers (SOAs) are important devices for optical communications being low-c...
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