This paper presents a refined modulated waveform measurement system for the robust characterization of nonlinear microwave devices when driven by broadband multi-tone stimuli. This enhanced system has the ability to present specific, constant impedances, not only to a large number of baseband (IF) components, but also to signals located around the carrier and significant harmonic frequencies. Achieving such comprehensive impedance control across wide modulation bandwidths is critical in allowing the 'emulation' of new power amplifier modes and architectures, and the subsequent waveform characterization of devices operating in these complex and often dynamic impedance environments. The enhanced system is demonstrated through a nu...
The microwave devices and circuits need to be characterized prior to being employed in the design o...
The microwave devices and circuits need to be characterized prior to being employed in the design o...
This paper demonstrates how the linearity performance of a 10 W GaN HEMT can be dramatically improve...
This paper presents a refined modulated waveform measurement system for the robust characterization...
This paper presents a refined modulated waveform measurement system for the robust characterization...
Microwave power transistors used in modern day wireless communication systems need to be characteris...
This paper presents a refined multitone measurement system for the robust characterization of nonlin...
This paper presents a refined multitone measurement system for the robust characterization of nonlin...
This paper presents the robust characterization of nonlinear microwave devices driven by broadband m...
This paper presents the robust characterization of nonlinear microwave devices driven by broadband m...
This paper presents the robust characterization of nonlinear microwave devices driven by broadband m...
This paper presents the robust characterization of nonlinear microwave devices driven by broadband m...
The out-of-band impedance environment is considered to be of paramount importance in engineering the...
The microwave devices and circuits need to be characterized prior to being employed in the design o...
The microwave devices and circuits need to be characterized prior to being employed in the design o...
The microwave devices and circuits need to be characterized prior to being employed in the design o...
The microwave devices and circuits need to be characterized prior to being employed in the design o...
This paper demonstrates how the linearity performance of a 10 W GaN HEMT can be dramatically improve...
This paper presents a refined modulated waveform measurement system for the robust characterization...
This paper presents a refined modulated waveform measurement system for the robust characterization...
Microwave power transistors used in modern day wireless communication systems need to be characteris...
This paper presents a refined multitone measurement system for the robust characterization of nonlin...
This paper presents a refined multitone measurement system for the robust characterization of nonlin...
This paper presents the robust characterization of nonlinear microwave devices driven by broadband m...
This paper presents the robust characterization of nonlinear microwave devices driven by broadband m...
This paper presents the robust characterization of nonlinear microwave devices driven by broadband m...
This paper presents the robust characterization of nonlinear microwave devices driven by broadband m...
The out-of-band impedance environment is considered to be of paramount importance in engineering the...
The microwave devices and circuits need to be characterized prior to being employed in the design o...
The microwave devices and circuits need to be characterized prior to being employed in the design o...
The microwave devices and circuits need to be characterized prior to being employed in the design o...
The microwave devices and circuits need to be characterized prior to being employed in the design o...
This paper demonstrates how the linearity performance of a 10 W GaN HEMT can be dramatically improve...