Contributions to strain-induced changes in threshold current and (e-hh) and (e-lh) recombination currents of GaInP lasers have been quantified and the factors which control the optimisation of threshold current at fixed wavelength identified
We investigate loss mechanisms in 1.3mum lasers and in visible lasers operating between 630nm and 69...
The authors measure the combined affect of strain and well width on the gain and recombination mecha...
The recombination processes in GaInNAs 1.3 μm lasers were analyzed theoretically and experimentally....
Contributions to strain-induced changes in threshold current and (e-hh) and (e-lh) recombination cur...
Contributions to strain-induced changes in threshold current and (e-hh) and (e-lh) recombination cur...
Self-consistent modelling of a 68 Å quantum well separate confinement heterostructure device lasing ...
Self-consistent modelling of a 68 Å quantum well separate confinement heterostructure device lasing ...
Self-consistent modelling of a 68 Å quantum well separate confinement heterostructure device lasing ...
We show that the dramatic changes in threshold current density with changing active region growth te...
It has been reported that the threshold current of GaInP quantum-well lasers at a fixed wavelength o...
It has been reported that the threshold current of GaInP quantum-well lasers at a fixed wavelength o...
It has been reported that the threshold current of GaInP quantum-well lasers at a fixed wavelength o...
The authors measure the combined affect of strain and well width on the gain and recombination mecha...
The authors measure the combined affect of strain and well width on the gain and recombination mecha...
We investigate the temperature and pressure dependence of carrier recombination processes occurring ...
We investigate loss mechanisms in 1.3mum lasers and in visible lasers operating between 630nm and 69...
The authors measure the combined affect of strain and well width on the gain and recombination mecha...
The recombination processes in GaInNAs 1.3 μm lasers were analyzed theoretically and experimentally....
Contributions to strain-induced changes in threshold current and (e-hh) and (e-lh) recombination cur...
Contributions to strain-induced changes in threshold current and (e-hh) and (e-lh) recombination cur...
Self-consistent modelling of a 68 Å quantum well separate confinement heterostructure device lasing ...
Self-consistent modelling of a 68 Å quantum well separate confinement heterostructure device lasing ...
Self-consistent modelling of a 68 Å quantum well separate confinement heterostructure device lasing ...
We show that the dramatic changes in threshold current density with changing active region growth te...
It has been reported that the threshold current of GaInP quantum-well lasers at a fixed wavelength o...
It has been reported that the threshold current of GaInP quantum-well lasers at a fixed wavelength o...
It has been reported that the threshold current of GaInP quantum-well lasers at a fixed wavelength o...
The authors measure the combined affect of strain and well width on the gain and recombination mecha...
The authors measure the combined affect of strain and well width on the gain and recombination mecha...
We investigate the temperature and pressure dependence of carrier recombination processes occurring ...
We investigate loss mechanisms in 1.3mum lasers and in visible lasers operating between 630nm and 69...
The authors measure the combined affect of strain and well width on the gain and recombination mecha...
The recombination processes in GaInNAs 1.3 μm lasers were analyzed theoretically and experimentally....
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