We have measured the absorption, gain and spontaneous emission spectra of GalnNAsSb (3.3%N), GalnNAs (0.5%N) and GalnAs quantum well structures to compare their merits as laser gain media. The parameters describing the relations between peak gain and current provide only limited insight. From the analysis of absorption spectra we have determined the intrinsic properties of the structures, represented by the product [reduced density of states × matrix element × overlap integral], taking account of differences in operating wavelength, well width and confinement. We find only a small variation in this product across the samples. The GalnNAsSb structure has a low radiative recombination current due in part to its low photon energy and also to d...
A new GaAs based material system capable of emission at 1.55 m is a quantum well of the quinary mate...
A new GaAs based material system capable of emission at 1.55 m is a quantum well of the quinary mate...
This thesis focuses on the theoretical analysis of GalnNAs alloys for use in optoelectronic devices....
We have measured the absorption, gain and spontaneous emission spectra of GalnNAsSb (3.3%N), GalnNAs...
We have measured the absorption, gain and spontaneous emission spectra of GalnNAsSb (3.3%N), GalnNAs...
Abstract — We have measured the absorption, gain and spon-taneous emission spectra of GaInNAsSb (3.3...
High-quality GaInN(Sb)As/GaNAs double quantum wells (QWs) which emit at 1.54 mu m wavelength at room...
We report the results of our studies of optical and electro-optic properties of GaInNAs/GaAs single ...
High-quality GaInN(Sb)As/GaNAs double quantum wells (QWs) which emit at 1.54 mu m wavelength at room...
High-quality GaInN(Sb)As/GaNAs double quantum wells (QWs) which emit at 1.54 mu m wavelength at room...
The optical gain spectra for GaInNAs/GaAs quantum wells are computed using a microscopic laser theor...
The authors report the temperature dependent photoluminescence characteristics of a series of GaInNA...
A new GaAs based material system capable of emission at 1.55 m is a quantum well of the quinary mate...
The authors report the temperature dependent photoluminescence characteristics of a series of GaInNA...
A new GaAs based material system capable of emission at 1.55 m is a quantum well of the quinary mate...
A new GaAs based material system capable of emission at 1.55 m is a quantum well of the quinary mate...
A new GaAs based material system capable of emission at 1.55 m is a quantum well of the quinary mate...
This thesis focuses on the theoretical analysis of GalnNAs alloys for use in optoelectronic devices....
We have measured the absorption, gain and spontaneous emission spectra of GalnNAsSb (3.3%N), GalnNAs...
We have measured the absorption, gain and spontaneous emission spectra of GalnNAsSb (3.3%N), GalnNAs...
Abstract — We have measured the absorption, gain and spon-taneous emission spectra of GaInNAsSb (3.3...
High-quality GaInN(Sb)As/GaNAs double quantum wells (QWs) which emit at 1.54 mu m wavelength at room...
We report the results of our studies of optical and electro-optic properties of GaInNAs/GaAs single ...
High-quality GaInN(Sb)As/GaNAs double quantum wells (QWs) which emit at 1.54 mu m wavelength at room...
High-quality GaInN(Sb)As/GaNAs double quantum wells (QWs) which emit at 1.54 mu m wavelength at room...
The optical gain spectra for GaInNAs/GaAs quantum wells are computed using a microscopic laser theor...
The authors report the temperature dependent photoluminescence characteristics of a series of GaInNA...
A new GaAs based material system capable of emission at 1.55 m is a quantum well of the quinary mate...
The authors report the temperature dependent photoluminescence characteristics of a series of GaInNA...
A new GaAs based material system capable of emission at 1.55 m is a quantum well of the quinary mate...
A new GaAs based material system capable of emission at 1.55 m is a quantum well of the quinary mate...
A new GaAs based material system capable of emission at 1.55 m is a quantum well of the quinary mate...
This thesis focuses on the theoretical analysis of GalnNAs alloys for use in optoelectronic devices....