Gate dependence of spin-splitting in an InSb/InAlSb quantum well
- Branford, W. R.
- Gilbertson, A. M.
- Buckle, Philip Derek
- Buckle, L.
- Ashley, T.
- Magnus, F.
- Clowes, S. K.
- Harris, J. J.
- Cohen, L. F.
DOIAbstract
A high mobility single subband occupancy InSb/InAlSb quantum well was grown by molecular beam epitaxy. The low-temperature, high-field magnetotransport properties are measured as a function of gate bias. Spin-resolved Shubnikov-de Haas oscillations are observed. A preliminary analysis of the Shubnikov-de Haas oscillations indicates a strong gate bias dependence of the Rashba spin-orbit term
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