Simulation of Dislocation Accumulation in ULSI Cells with STI structure

The periodic structure of the shallow trench isolation (STI) type ULSI cells is generally used for the latest semiconductor device structure. However, dislocations sometimes accumulate in the electron channel when the device size becomes small, and they have an enormous effect on the electronic state and obstruct the device from normal operation. In this paper, we numerically model the periodic structure of the STI type ULSI cells, and analyze the plastic slip that takes place during the oxidation process of oxide film area. The slip deformation is analyzed by a crystal plasticity analysis cord, which has been developed on the basis of finite element technique, and we evaluate the accumulation of dislocations that accompany plastic slip. The results show stress concentrations at the shoulder part of the device area and the bottom corners of the trench for the device isolation, and high stresses at these area cause plastic slip and dislocation accumulation. The direction of these dislocation lines are shown to be mostly parallel to the trench direction and dislocations are approximately 60° mixed type