Terahertz characterization of semiconductor alloy AlInN: negative imaginary conductivity and its meaning
- KANG, Ting-Ting
- YAMAMOTO, Masatomo
- TANAKA, Mikiyasu
- HASHIMOTO, Akihiro
- Yamamoto, Akio
- SUTO, Ryota
- NODA, Akifumi
- LIU, D. W.
- YAMAMOTO, Kohji
Publication date
August 2009
DOI Publisher
Optical Society of America ISSN
0146-9592Abstract
Through terahertz time-domain spectroscopy, negative imaginary conductivity is observed in In-rich AlInN film grown by metal-organic chemical vapor deposition for frequencies from 0.2 to 2.0 THz. This non-Drude behavior is explained based on the electron back scattering theory of N. V. Smith. Comparing with binary semiconductor InN, potential fluctuations produced by composition inhomogeneity and alloy scattering of carriers make In-rich AlInN alloy easier subjected to non-Drude behavior in electrical performance
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