Impact ionization in silicon at low charge-carrier energies
- Korpusenko, Mikhail
- Vaskuri, Anna
- Manoocheri, Farshid
- Ikonen, Erkki
DOIAbstract
Photons absorbed in silicon produce electron–hole pairs, which can cause impact ionization and quantum yield larger than one. Reliable determination of quantum yield at low charge-carrier energies (<4 eV) has been challenging because photon losses due to reflectance and charge-carrier losses due to recombination affect the resulting photocurrent. Here, we present how the measurement of this fundamental characteristic of silicon crystals can be improved in the charge-carrier energy range of 1.6–4 eV by using a predictable quantum efficient detector based on induced junction photodiodes optimized for photon-to-electron conversion efficiency. The measured quantum yield values are compared with the results of theoretical calculations, revealing...
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