International audienceThis paper reports the integration and characterization of germanium telluride (GeTe) phase-change material (PCM)-based RF switches in series configuration with a 89 μm wide PCM element to address sub-6G power handling requirements. Switching conditions using indirect heating, as well as small- and large-signal measurements are performed in this work. Devices handle power up to 37 dBm and 29 dBm respectively in ON- and OFF-state at 915 MHz. These results estimate for the first time the performances of such wide GeTe switches compatible with cellular applications and investigate technological improvement guidelines
International audienceWe present the fabrication and characterization of novel RF switches based on ...
Germanium telluride (GeTe) is a phase change material (PCM) that undergoes an exponential decrease i...
Germanium telluride (GeTe) is a phase change material that undergoes an amorphous to crystalline tra...
International audienceThe study presented in this paper concerns Telluride Germanium Phase Change Ma...
International audienceThis paper presents the phase change characterization of Germanium Telluride G...
International audienceThis paper presents a RF to mm-wave switch based on Germanium Telluride phase ...
This research work is focused on the study and development of chalcogenide phase change materials an...
Phase change materials are attractive candidates for use in ohmic switches as they can be thermally ...
Advanced understanding of the physics makes phase change materials (PCM) and metal-insulator transit...
RF switches are the fundamental building blocks for realizing reconfigurable front-ends in communica...
International audienceWe report the fabrication and the high-frequencycharacterization of four-termi...
Germanium Telluride (GeTe) can be described as a non-volatile (latching state) phase change material...
Germanium telluride (GeTe) is a chalcogenide phase change material which is nonvolatile and changes ...
The large resistance contrast between amorphous and crystalline states of phase change materials (PC...
International audienceWe present the fabrication and characterization of novel RF switches based on ...
Germanium telluride (GeTe) is a phase change material (PCM) that undergoes an exponential decrease i...
Germanium telluride (GeTe) is a phase change material that undergoes an amorphous to crystalline tra...
International audienceThe study presented in this paper concerns Telluride Germanium Phase Change Ma...
International audienceThis paper presents the phase change characterization of Germanium Telluride G...
International audienceThis paper presents a RF to mm-wave switch based on Germanium Telluride phase ...
This research work is focused on the study and development of chalcogenide phase change materials an...
Phase change materials are attractive candidates for use in ohmic switches as they can be thermally ...
Advanced understanding of the physics makes phase change materials (PCM) and metal-insulator transit...
RF switches are the fundamental building blocks for realizing reconfigurable front-ends in communica...
International audienceWe report the fabrication and the high-frequencycharacterization of four-termi...
Germanium Telluride (GeTe) can be described as a non-volatile (latching state) phase change material...
Germanium telluride (GeTe) is a chalcogenide phase change material which is nonvolatile and changes ...
The large resistance contrast between amorphous and crystalline states of phase change materials (PC...
International audienceWe present the fabrication and characterization of novel RF switches based on ...
Germanium telluride (GeTe) is a phase change material (PCM) that undergoes an exponential decrease i...
Germanium telluride (GeTe) is a phase change material that undergoes an amorphous to crystalline tra...