International audienceWe present an overview of the performances of FDSOI CMOS transistors down to deep cryogenic temperature, highlighting in particular the benefits brought by the back bias. FDSOI transistors are operational from room temperature down to temperature as lowas 100mK. The main DC electrical characteristics, as well as variability properties and reliability are measured and analyzed.We also point out specific behaviors appearing at cryogenic temperature, and discuss their physical origin and modeling
This work presents a detailed characterization of 28 nm FDSOI CMOS process at cryogenic temperatures...
CMOS circuits operating at cryogenic temperature (cryo-CMOS) are required in several low-temperature...
This paper presents the first experimental investigation and physical discussion of the cryogenic be...
International audienceWe present an overview of the performances of FDSOI CMOS transistors down to d...
International audienceWe present an overview of the performances of FDSOI CMOS transistors down to d...
International audienceThe wide range of cryogenic applications, such as spatial, high performance co...
In this paper a commercial 28 nm FDSOI CMOS technology is characterized and modeled from room temper...
The wide range of cryogenic applications, such as spatial, high performance computing or high-energy...
This paper presents an extensive characterization and modeling of a commercial 28-nm FDSOI CMOS proc...
Promising results of state-of-the-art quantum computers fuel a world-wide effort in academic and pri...
With the emergence of quantum computing, low temperature operational CMOS transistors (operating aro...
Device characteristics at cryogenic temperatures can deviate significantly from their room temperatu...
Device characteristics at cryogenic temperatures can deviate significantly from their room temperatu...
International audienceWe present an overview of DC electrical characterization of FDSOI transistors ...
This work presents a detailed characterization of 28 nm FDSOI CMOS process at cryogenic temperatures...
This work presents a detailed characterization of 28 nm FDSOI CMOS process at cryogenic temperatures...
CMOS circuits operating at cryogenic temperature (cryo-CMOS) are required in several low-temperature...
This paper presents the first experimental investigation and physical discussion of the cryogenic be...
International audienceWe present an overview of the performances of FDSOI CMOS transistors down to d...
International audienceWe present an overview of the performances of FDSOI CMOS transistors down to d...
International audienceThe wide range of cryogenic applications, such as spatial, high performance co...
In this paper a commercial 28 nm FDSOI CMOS technology is characterized and modeled from room temper...
The wide range of cryogenic applications, such as spatial, high performance computing or high-energy...
This paper presents an extensive characterization and modeling of a commercial 28-nm FDSOI CMOS proc...
Promising results of state-of-the-art quantum computers fuel a world-wide effort in academic and pri...
With the emergence of quantum computing, low temperature operational CMOS transistors (operating aro...
Device characteristics at cryogenic temperatures can deviate significantly from their room temperatu...
Device characteristics at cryogenic temperatures can deviate significantly from their room temperatu...
International audienceWe present an overview of DC electrical characterization of FDSOI transistors ...
This work presents a detailed characterization of 28 nm FDSOI CMOS process at cryogenic temperatures...
This work presents a detailed characterization of 28 nm FDSOI CMOS process at cryogenic temperatures...
CMOS circuits operating at cryogenic temperature (cryo-CMOS) are required in several low-temperature...
This paper presents the first experimental investigation and physical discussion of the cryogenic be...