International audienceWe propose a pragmatic OxRAM device compact model describing SET, RESET, read operations and accounting for variability. The model is implemented in Verilog-A and usable with standard SPICE simulator. The objective is not to provide physical insights into OxRAM device operation but to develop a robust model, simple to calibrate and accounting for the main effect for design studies. It includes the dependency of Low Resistive State (LRS) resistance with compliance current, and of High Resistive State (HRS) resistance with the programming voltage: the proposed model is able to describe multi-level OxRAM. Switching time variation with programming voltages for SET and RESET operations is also included. It is validated on H...
One of the important features of Resistive RAM (RRAM) is its conductance modulation, which makes it ...
International audienceThis letter studies the intrinsic variability in oxide-based resistive RAM tec...
International audienceA deeper understanding of the impact of variability on Oxide-based Resistive R...
International audienceEmerging non-volatile memories based on resistive switching mechanisms attract...
International audience—Emerging non-volatile memories based on resistive switching mechanisms pull i...
RRAM technology relying on transitional metal oxides (namely OxRAM) is about to reach the industrial...
Les mémoires résistives à base d’oxyde OxRAM sont une technologie de mémoire non-volatile dite émerg...
session 7: Memories and magnetic devicesInternational audienceIn this work, a model is proposed to e...
12th IEEE International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DT...
Oxyde-based resistive memories OxRAM are a technology of emergent non-volatile memory, as phase-chan...
International audienceThis work presents a model that allows to explain the resistance variability o...
One of the important features of Resistive RAM (RRAM) is its conductance modulation, which makes it ...
International audienceThis letter studies the intrinsic variability in oxide-based resistive RAM tec...
International audienceA deeper understanding of the impact of variability on Oxide-based Resistive R...
International audienceEmerging non-volatile memories based on resistive switching mechanisms attract...
International audience—Emerging non-volatile memories based on resistive switching mechanisms pull i...
RRAM technology relying on transitional metal oxides (namely OxRAM) is about to reach the industrial...
Les mémoires résistives à base d’oxyde OxRAM sont une technologie de mémoire non-volatile dite émerg...
session 7: Memories and magnetic devicesInternational audienceIn this work, a model is proposed to e...
12th IEEE International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DT...
Oxyde-based resistive memories OxRAM are a technology of emergent non-volatile memory, as phase-chan...
International audienceThis work presents a model that allows to explain the resistance variability o...
One of the important features of Resistive RAM (RRAM) is its conductance modulation, which makes it ...
International audienceThis letter studies the intrinsic variability in oxide-based resistive RAM tec...
International audienceA deeper understanding of the impact of variability on Oxide-based Resistive R...