Simulations and electrical characterization of Double-side Double Type Column 3D detectors

We report here the results of the electrical characterization of 3D-DDTC diode samples in virgin conditions and after exposition to reactor's neutrons with a fluence of 1015 neq · cm−2. CV and IV measurements before irradiation have been employed to calibrate a commercial TCAD simulation tool, which has been then used to reproduce the effects of radiation damage in the detector. Simulation results are compared to post irradiation measurements. A systematic study of the effects of the positive oxide charge on the breakdown behaviour reveals a non-monotonic trend which causes the V BR to remain almost unchanged compared to measured pre-irradiation values