Abstract Functionalization of boron nitride (BN) materials with hydroxyls has attracted great attention to accomplish better performances at micro- and nanoscale. BN surface hydroxylation, in fact, induces a change in properties and allows expanding the fields of application. In this review, we have summarized the state-of-the-art in developing hydroxylated bulk and nanoscale BN materials. The different synthesis routes to develop hydroxyl BN have been critically discussed. What emerges is the great variety of possible strategies to achieve BN hydroxylation, which, in turn, represents one of the most suitable methods to improve the solubility of BN nanomaterials. The improved stability of BN solutions creates conditions for producing high-q...
© 2015 by Taylor & Francis Group, LLC. Boron nitride (BN) nanostructures can have varied structure...
The research topic of this Special Issue will consider (i) the design of nanostructured boron nitrid...
Although hexagonal boron nitride (h-BN) is a good candidate for gate-insulating materials by minimiz...
h-BN nanosheet (denoted as h-BNNS) is a layer-structured material that has many outstanding properti...
Hexagonal boron nitride (h-BN) is an analogue of graphite called “white graphene.” In the structure ...
Functionalization is an important way to breed new properties and applications for a material. This ...
Hydroxylation as a technique is mainly used to alter the chemical characteristics of hexagonal boron...
Carbon and boron-nitride based nanomaterials possess many exciting properties making them suitable f...
Hexagonal boron nitrides (hBNs) have recently been investigated for several novel applications due t...
While the surface of many ceramic particles is covered by positive and negative species, boron nitri...
The covalent chemical functionalization of exfoliated hexagonal boron–nitride nanosheets (BNNSs) is ...
The III-nitride semiconductors are known for their excellent extrinsic properties like direct bandga...
Boron nitride (BN) is a synthetic binary compound located between III and V group elements in the Pe...
This is the author accepted manuscriptBoron nitride nanoscrolls (BNS) are open-ended, one-dimensiona...
Boron nitride has structural characteristics similar to carbon 2D materials (graphene and its deriva...
© 2015 by Taylor & Francis Group, LLC. Boron nitride (BN) nanostructures can have varied structure...
The research topic of this Special Issue will consider (i) the design of nanostructured boron nitrid...
Although hexagonal boron nitride (h-BN) is a good candidate for gate-insulating materials by minimiz...
h-BN nanosheet (denoted as h-BNNS) is a layer-structured material that has many outstanding properti...
Hexagonal boron nitride (h-BN) is an analogue of graphite called “white graphene.” In the structure ...
Functionalization is an important way to breed new properties and applications for a material. This ...
Hydroxylation as a technique is mainly used to alter the chemical characteristics of hexagonal boron...
Carbon and boron-nitride based nanomaterials possess many exciting properties making them suitable f...
Hexagonal boron nitrides (hBNs) have recently been investigated for several novel applications due t...
While the surface of many ceramic particles is covered by positive and negative species, boron nitri...
The covalent chemical functionalization of exfoliated hexagonal boron–nitride nanosheets (BNNSs) is ...
The III-nitride semiconductors are known for their excellent extrinsic properties like direct bandga...
Boron nitride (BN) is a synthetic binary compound located between III and V group elements in the Pe...
This is the author accepted manuscriptBoron nitride nanoscrolls (BNS) are open-ended, one-dimensiona...
Boron nitride has structural characteristics similar to carbon 2D materials (graphene and its deriva...
© 2015 by Taylor & Francis Group, LLC. Boron nitride (BN) nanostructures can have varied structure...
The research topic of this Special Issue will consider (i) the design of nanostructured boron nitrid...
Although hexagonal boron nitride (h-BN) is a good candidate for gate-insulating materials by minimiz...