Abstract Large area 4H-SiC Schottky diodes equipped with a 6LiF converter were tested as neutron detectors in the epithermal column realized for Boron Neutron Capture Therapy (BNCT) applications at the fast reactor TAPIRO (ENEA Casaccia Roma). The neutron spectra were assessed using the Monte Carlo code MCNP-4C. The performances of SiC detectors were evaluated with neutron fluences in the range of 109–1013 cm−2 which is typical for BNCT. Spectra of alpha and tritium particles generated by 6Li(n,α)3H reaction were collected at various neutron fluences and spectra obtained by interposing polyethylene moderators of different thickness. Only weak damaging effects primarily due to the alpha particles were observed; at neutron fluence of 1013 c...
In this work we present the response of a new large volume 4H Silicon Carbide (SiC) detector to 14 M...
A high-sensitivity boron-diffused silicon carbide (4H-SiC) p-n diode has been designed and fabricate...
International audienceIn the framework of the European I-Smart project, optimal 4H-SiC based diode g...
We report the results of an experimental study on the radiation hardness of 4H-SiC diodes used as al...
In this work, we present the improved efficiency of 4H-SiC Schottky barrier diodes-based detectors e...
We report on response of newly designed 4H-SiC Schottky barrier diode (SBD) detector to alpha, beta ...
In this work we report electrical characterizations on heavily irradiated epitaxial 4H-SiC Schottky ...
In 2016, the ”E-SiCure” project (standing for Engineering Silicon Carbide for Border and Port Securi...
In 2016, the NATO Science for Peace and Security Programme funded research project "Engineering Sili...
In 2016, the “E-SiCure” project (standing for “Engineering Silicon Carbide for Border and Port Secur...
Harsh radiation environments are characterised by high temperature, high radiation fluence high pres...
none5noneNava F.; Castaldini A.; Cavallini A.; Errani P.; Cindro V.;Nava F.; Castaldini A.; Cavallin...
Here, we describe the early stage design, construction and testing of a miniature silicon carbide di...
We describe the early stage development of a miniature silicon carbide neutron sensor, for applicati...
Silicon carbide (SiC) is a promising material for neutron detection at harsh environments because of...
In this work we present the response of a new large volume 4H Silicon Carbide (SiC) detector to 14 M...
A high-sensitivity boron-diffused silicon carbide (4H-SiC) p-n diode has been designed and fabricate...
International audienceIn the framework of the European I-Smart project, optimal 4H-SiC based diode g...
We report the results of an experimental study on the radiation hardness of 4H-SiC diodes used as al...
In this work, we present the improved efficiency of 4H-SiC Schottky barrier diodes-based detectors e...
We report on response of newly designed 4H-SiC Schottky barrier diode (SBD) detector to alpha, beta ...
In this work we report electrical characterizations on heavily irradiated epitaxial 4H-SiC Schottky ...
In 2016, the ”E-SiCure” project (standing for Engineering Silicon Carbide for Border and Port Securi...
In 2016, the NATO Science for Peace and Security Programme funded research project "Engineering Sili...
In 2016, the “E-SiCure” project (standing for “Engineering Silicon Carbide for Border and Port Secur...
Harsh radiation environments are characterised by high temperature, high radiation fluence high pres...
none5noneNava F.; Castaldini A.; Cavallini A.; Errani P.; Cindro V.;Nava F.; Castaldini A.; Cavallin...
Here, we describe the early stage design, construction and testing of a miniature silicon carbide di...
We describe the early stage development of a miniature silicon carbide neutron sensor, for applicati...
Silicon carbide (SiC) is a promising material for neutron detection at harsh environments because of...
In this work we present the response of a new large volume 4H Silicon Carbide (SiC) detector to 14 M...
A high-sensitivity boron-diffused silicon carbide (4H-SiC) p-n diode has been designed and fabricate...
International audienceIn the framework of the European I-Smart project, optimal 4H-SiC based diode g...