Effects of neutron fluences up to 1016 n/cm2 and gamma doses up to 5 Mrad on monolithic fast preamplifiers

Abstract A fast bipolar monolithic Charge Sensitive Preamplifier (CSP), implemented in a 2 μm BiCMOS technology called HF2CMOS, was exposed to neutron fluences (φ) of up to about 1016 n/cm2 and photons of up to 5 Mrad. An increasing degradation of the base spreading resistance, rbb′ as well as increased parallel noise of the input NPN transistor and the PMOS transistor of the second stage of the CSP, was observed for φ > 1014n/cm2. The increase of rbb′ was found to be consistent with a decrease of carrier concentration in the base region, after maximum neutron irradiation