The surface electronic properties of metal oxides, which affect the performances of layered electronic devices, are controlled by non-thermal atmospheric-pressure plasmas generated using a fabric-type electrode and gas flow induced through this plasma layer. We specify a method to control the work function of indium tin oxide (ITO) films by this plasma, in which such reactive species as oxidant radicals are generated. These oxidants are spatially transported in the gas flow to the ITO surface and increase the ITO's work function, as verified in our experimental results. To examine the effects of the increased work function in a specific electronic device, we treat the surface of an ITO electrode in an organic light-emitting diode and observ...
Indium tin oxide (ITO), Au and Pt are materials of interest as high work function contacts for organ...
We performed optical emission spectroscopy to monitor the plasma produced during the ablation of ind...
Indium tin oxide (ITO) thin films with a specific resistivity of 3.5 × 10− 4 Ω cm and average visibl...
We report on the effects of surface treatment with N2, O2, and N2O plasmas on the work function of i...
The effects of O-2 inductively coupled plasma (ICP) treatment on the chemical composition and work f...
A commercial, vertical inline deposition tool for mass production of OLEDs (provided by Applied Mate...
The effects of O2-plasma treatment on the surface properties of indium-tin-oxide (ITO) anodes and th...
grantor: University of TorontoOrganic light emitting diodes (OLEDs) have attracted a wide ...
The work function of indium tin oxide (ITO) was modified using caesium fluoride (CsF). Various conce...
Surface modification was performed on the indium-tin-oxide (ITO) thin films by oxygen inductive coup...
In this paper, we implement a post-oxidation method to modify surface characteristics of indium tin ...
This dissertation has focused on the study of the ITO/organic heterojunction and the chemistries the...
The influence of plasma oxidation and other surface pretreatments on the electronic structure of ind...
Various surface treatments significantly affect the work function and surface roughness of indium ti...
Relationships between the work function of indium tin oxide (ITO) and device performances of C60 mod...
Indium tin oxide (ITO), Au and Pt are materials of interest as high work function contacts for organ...
We performed optical emission spectroscopy to monitor the plasma produced during the ablation of ind...
Indium tin oxide (ITO) thin films with a specific resistivity of 3.5 × 10− 4 Ω cm and average visibl...
We report on the effects of surface treatment with N2, O2, and N2O plasmas on the work function of i...
The effects of O-2 inductively coupled plasma (ICP) treatment on the chemical composition and work f...
A commercial, vertical inline deposition tool for mass production of OLEDs (provided by Applied Mate...
The effects of O2-plasma treatment on the surface properties of indium-tin-oxide (ITO) anodes and th...
grantor: University of TorontoOrganic light emitting diodes (OLEDs) have attracted a wide ...
The work function of indium tin oxide (ITO) was modified using caesium fluoride (CsF). Various conce...
Surface modification was performed on the indium-tin-oxide (ITO) thin films by oxygen inductive coup...
In this paper, we implement a post-oxidation method to modify surface characteristics of indium tin ...
This dissertation has focused on the study of the ITO/organic heterojunction and the chemistries the...
The influence of plasma oxidation and other surface pretreatments on the electronic structure of ind...
Various surface treatments significantly affect the work function and surface roughness of indium ti...
Relationships between the work function of indium tin oxide (ITO) and device performances of C60 mod...
Indium tin oxide (ITO), Au and Pt are materials of interest as high work function contacts for organ...
We performed optical emission spectroscopy to monitor the plasma produced during the ablation of ind...
Indium tin oxide (ITO) thin films with a specific resistivity of 3.5 × 10− 4 Ω cm and average visibl...