1050-gate arrays have been successfully designed and fabricated. Chip size is 3.75×3.75 mm. A basic cell can be programmed as an E/D-type DCFL three-input NOR gate. Speed performance measured at 0.2-mW/gate power dissipation was as follows. Unloaded (fanout=1) propagation delay time was 100 ps/gate. Load dependence of the delay time was 65 ps/1 mm interconnection line, 27 ps/fanout, and 3.33 ps/crossover load. This leads to 350 ps/gate delay under the assumed loading condition of interconnection line length=3 mm and three fanouts. The gate array was applied to 6×6 bit parallel multiplier circuit. The 10.6 ns multiplication time was measured at 380 mW power consumption. The operation speed of the personalized circuit can be well described by...
The design of a high clock-rate microprocessor in gallium arsenide E/D MESFET Direct-Coupled FET Log...
High speed MSI GaAs I. C multiplexers operating up to a 1.9 Gbit/s bit rate have been designed and f...
The design of a high clock-rate microprocessor in gallium arsenide E/D MESFET Direct-Coupled FET Log...
A GaAs gate array family is fabricated with Thomson Composants Microondes Self Aligned Gallium Arsen...
A 6K-gate GaAs gate array has been successfully designed and fabricated using a new large-noise-marg...
To increase performance of GaAs LSI digital circuits, a 0.5 μm recessed gate process has been d...
To increase performace of GaAs LSI digital circuits, a 0,5 mym recessed gate process has been develo...
technical reportThis thesis presents the design of a self-timed, floating point multiplier in Galliu...
technology developed at Motorola for low-power, portable, digital and mixed-mode circuits is being e...
This paper presents a combinatorial circuit for fast division Q:=A/D. High speed is achieved thanks ...
This paper compares three compatible normally-off classes of digital logic, namely DCFL, SDCFL and S...
A comparison is made of the performance of silicon bipolar and AlGaAs/GaAs heterojunction bipolar te...
Journal ArticleAbstract-The problems with synchronous designs at high clock frequencies have been we...
This thesis explores the feasibility of designing a computer using gallium arsenide very large scale...
This thesis explores the feasibility of designing a computer using gallium arsenide very large scale...
The design of a high clock-rate microprocessor in gallium arsenide E/D MESFET Direct-Coupled FET Log...
High speed MSI GaAs I. C multiplexers operating up to a 1.9 Gbit/s bit rate have been designed and f...
The design of a high clock-rate microprocessor in gallium arsenide E/D MESFET Direct-Coupled FET Log...
A GaAs gate array family is fabricated with Thomson Composants Microondes Self Aligned Gallium Arsen...
A 6K-gate GaAs gate array has been successfully designed and fabricated using a new large-noise-marg...
To increase performance of GaAs LSI digital circuits, a 0.5 μm recessed gate process has been d...
To increase performace of GaAs LSI digital circuits, a 0,5 mym recessed gate process has been develo...
technical reportThis thesis presents the design of a self-timed, floating point multiplier in Galliu...
technology developed at Motorola for low-power, portable, digital and mixed-mode circuits is being e...
This paper presents a combinatorial circuit for fast division Q:=A/D. High speed is achieved thanks ...
This paper compares three compatible normally-off classes of digital logic, namely DCFL, SDCFL and S...
A comparison is made of the performance of silicon bipolar and AlGaAs/GaAs heterojunction bipolar te...
Journal ArticleAbstract-The problems with synchronous designs at high clock frequencies have been we...
This thesis explores the feasibility of designing a computer using gallium arsenide very large scale...
This thesis explores the feasibility of designing a computer using gallium arsenide very large scale...
The design of a high clock-rate microprocessor in gallium arsenide E/D MESFET Direct-Coupled FET Log...
High speed MSI GaAs I. C multiplexers operating up to a 1.9 Gbit/s bit rate have been designed and f...
The design of a high clock-rate microprocessor in gallium arsenide E/D MESFET Direct-Coupled FET Log...