N-channel field effect transistors with fullerene thin films and their application to logic gate circuit

N-channel field effect transistors (FETs) were fabricated with thin films of C_ and Dy@C_. A typical enhancement-type FET property was observed in C_ FET above 220 K. The mobility of C_ FET increased with increasing temperature. This fact suggests hopping transport as the conduction mechanism, with the activation energy of 0.29 eV. The Dy@C_ FET was found to be a normally-on type FET, which has a property different from that for C_ and C_ FETs. A complementary metal oxide semiconductor (CMOS) logic gate circuit was first fabricated with C_ and pentacene thin-film FETs