Output properties of C_<60> field-effect transistor device with Eu source/drain electrodes

Field-effect transistor (FET) device with thin films of C_ has been fabricated with Eu electrodes exhibiting small work function. The C_ FET device shows n-channel FET properties with high field-effect mobility, 0.50 cm^2 V^ s^. Furthermore, nonvanishing drain current, i.e., normally on, is observed in this FET device. This originates from small energy barrier for electron from Eu source electrode to lowest unoccupied molecular orbital of C_