We present a study of a statistical model of arrays of quantum dots, in which electrons are confined by semiconductor heterojunctions in all three dimensions, with Coulomb coupling. Our model describes repulsively interacting localized electrons whose number can vary with changes in chemical potential. By means of a Monte Carlo simulation, it is shown that, at low temperatures, some stable electron densities hardly changing in certain ranges of chemical potential appear, which are associated with suppressed fluctuation and characteristic spatial electron distributions. Spin fluctuation, which gives magnetic susceptibility, exhibits essentially different behavior depending on temperature and Coulomb energies
Recent advances in the field of nanotechnology have enabled the precise, controlled fabrication of m...
We present a model of electron transport through a random distribution of interacting quantum dots e...
Strong electronic interactions in quantum materials are responsible for phenomena such as high-Tc s...
A Monte Carlo model is developed for the hopping conductance in arrays of quantum dots (QDs). Hoppin...
We use Kohn-Sham spin-density-functional theory to study the statistics of ground-state spin and the...
The electronic properties of quantum dot (QD) arrays are strongly influenced by the Coulomb interact...
17 pages, 4 figures,We use random matrix models to investigate the ground state energy of electrons ...
10 pages, 12 figuresWe use Kohn-Sham spin-density-functional theory to study the statistics of groun...
Systems of confined electrons are found everywhere in nature in the form of atoms where the orbiting...
The energy level structure of an interacting system of electrons is analysed. The model chosen descr...
A long one-dimensional wire with a finite density of strong random impurities is modeled as a chain ...
We show that the addition spectra of semiconductor quantum dots in the presence of magnetic field ca...
Interacting fermions on a lattice can develop strong quantum correlations, which are the cause of th...
We investigate the linear DC transport properties of one-dimensional quantum dots that are immersed ...
Semiconductor quantum dots represent nanoscale systems with few electrons confined in a semiconducto...
Recent advances in the field of nanotechnology have enabled the precise, controlled fabrication of m...
We present a model of electron transport through a random distribution of interacting quantum dots e...
Strong electronic interactions in quantum materials are responsible for phenomena such as high-Tc s...
A Monte Carlo model is developed for the hopping conductance in arrays of quantum dots (QDs). Hoppin...
We use Kohn-Sham spin-density-functional theory to study the statistics of ground-state spin and the...
The electronic properties of quantum dot (QD) arrays are strongly influenced by the Coulomb interact...
17 pages, 4 figures,We use random matrix models to investigate the ground state energy of electrons ...
10 pages, 12 figuresWe use Kohn-Sham spin-density-functional theory to study the statistics of groun...
Systems of confined electrons are found everywhere in nature in the form of atoms where the orbiting...
The energy level structure of an interacting system of electrons is analysed. The model chosen descr...
A long one-dimensional wire with a finite density of strong random impurities is modeled as a chain ...
We show that the addition spectra of semiconductor quantum dots in the presence of magnetic field ca...
Interacting fermions on a lattice can develop strong quantum correlations, which are the cause of th...
We investigate the linear DC transport properties of one-dimensional quantum dots that are immersed ...
Semiconductor quantum dots represent nanoscale systems with few electrons confined in a semiconducto...
Recent advances in the field of nanotechnology have enabled the precise, controlled fabrication of m...
We present a model of electron transport through a random distribution of interacting quantum dots e...
Strong electronic interactions in quantum materials are responsible for phenomena such as high-Tc s...