Output properties of C_<60> field-effect transistors with different source/drain electrodes

C_ field-effect transistors (FETs) have been fabricated with source/drain electrodes of three different materials, indium tin oxide (ITO), Au, and Pt. High field-effect mobility μ_ of FETs with ITO electrodes, 1.6×10^ cm^2 /V s, shows that ITO is a potential material for the electrodes of organic electronics. Although the highest Schottky barrier and the lowest μ_ were expected,μ_ of FET with Pt electrodes (1.4×10^ cm^2/V s) is higher than that of FET with Au electrodes (9.6×10^ cm^2/V s). The result suggests that modification of local electronic structure at the interface between electrodes and C_ affects device performance