Fabrication of C_<60> field-effect transistors with polyimide and Ba_<0.4>Sr_<0.6>Ti_,<0.96>O_3 gate insulators

A flexible C_ field-effect transistor (FET) device has been fabricated with a polyimide gate insulator on the poly(ethylene terephthalate) substrate, and n-channel normally off FET properties are observed in this FET device. The field-effect mobility, μ, is estimated to be ~10^ cm^2 V^ s^ at 300 K. Furthermore, the C_ FET has been fabricated with a high-dielectric Ba_Sr_Ti_O_3(BST) gate insulator, showing n-channel properties; the μ value is estimated to be ~10^ cm^2 V^ s^ at 300 K. The FET device operates at very low gate voltage, V_G, and low drain-source voltage, V_. Thus these C_ FET devices possess flexibility and low-voltage operation characteristic of polyimide and BST gate insulators, respectively