Low Al-content n-type AlxGa1-xN layers with a high-electron-mobility grown by hot-wall metalorganic chemical vapor deposition

In this work, we demonstrate the capability of the hot-wall metalorganic\ua0chemical vapor deposition\ua0to deliver high-quality\ua0n-AlxGa1−xN (x\ua0= 0\ua0–\ua00.12, [Si] = 1 71017\ua0cm−3)\ua0epitaxial layers\ua0on 4H-SiC(0001). All layers are crack-free, with a very small root mean square roughness (0.13\ua0–\ua00.25 nm), homogeneous distribution of Al over film thickness and a very low unintentional incorporation of oxygen at the detection limit of 5 71015\ua0cm−3\ua0and carbon of 2 71016\ua0cm−3. Edge type dislocations in the layers gradually increase with increasing Al content while\ua0screw dislocations\ua0only raise for\ua0x\ua0above 0.077. The room temperature\ua0electron mobility\ua0of the\ua0n-AlxGa1−xN remain in the range of 400\ua0–\ua0470 cm2/(V.s) for Al contents between 0.05 and 0.077 resulting in comparable or higher Baliga figure of merit with respect to GaN, and hence demonstrating their suitability for implementation as drift layers in power device applications. Further increase in Al content is found to result in significant deterioration of the electrical properties