The gain and refractive index dynamics of dilute nitride antimonide semiconductor optical amplifiers are studied using heterodyne pump probe spectroscopy, both in forward and reverse bias regimes. In the forward biased absorption regime, both gain and refractive index relax on the same timescale indicating that both quantities are linked to the same relaxation process, interband recombination. Above transparency, in the forward biased gain regime, the gain and phase exhibit differing timescales resulting in a dynamical alpha factor that varies strongly with time. Reversed bias measurements suggest a recombination dominated absorption recovery where the recovery timescale increases with increasing reversed bias, possibly due to charge separa...
We present experimental and theoretical results on ultrafast nonlinear dynamics in InGaAsP semicondu...
Abstract—We investigate nonlinear carrier dynamics in a multiquantum-well semiconductor optical ampl...
The gain and index dynamics of a QD amplifier operating at 1.55 mum are characterized via heterodyne...
The gain and refractive index dynamics of dilute nitride antimonide semiconductor optical amplifiers...
We investigate ultrafast refractive index dynamics in a multiquantum-well InGaAsP-InGaAs semiconduct...
We explain how a semiconductor optical amplifier in a Sagnac-interferometric arrangement can be used...
The ultrafast gain and refractive index dynamics in AlInAs/AlGaAs quantum dot (QD) based semiconduct...
To study the dynamic effects in GaInNAs vertical-cavity semiconductor amplifiers (VCSOAs), we carrie...
We investigate ultrafast refractive index dynamics in a multi-quantum well InGaAsPInGaAs semiconduct...
The nonlinear gain response of InGaAsP bulk optical amplifiers under ultrafast optical excitation at...
The ultrafast gain dynamics of a semiconductor optical amplifier is measured under phase-correlated ...
International audienceWe study theoretically gain recovery dynamics in a semiconductor optical ampli...
Recent pump probe measurements of the fast optical response of semiconductor laser amplifiers are mo...
Recombination processes of excess carriers play a key role in optoelectronic device operation and th...
We present experimental and theoretical results on ultrafast nonlinear dynamics in InGaAsP semicondu...
Abstract—We investigate nonlinear carrier dynamics in a multiquantum-well semiconductor optical ampl...
The gain and index dynamics of a QD amplifier operating at 1.55 mum are characterized via heterodyne...
The gain and refractive index dynamics of dilute nitride antimonide semiconductor optical amplifiers...
We investigate ultrafast refractive index dynamics in a multiquantum-well InGaAsP-InGaAs semiconduct...
We explain how a semiconductor optical amplifier in a Sagnac-interferometric arrangement can be used...
The ultrafast gain and refractive index dynamics in AlInAs/AlGaAs quantum dot (QD) based semiconduct...
To study the dynamic effects in GaInNAs vertical-cavity semiconductor amplifiers (VCSOAs), we carrie...
We investigate ultrafast refractive index dynamics in a multi-quantum well InGaAsPInGaAs semiconduct...
The nonlinear gain response of InGaAsP bulk optical amplifiers under ultrafast optical excitation at...
The ultrafast gain dynamics of a semiconductor optical amplifier is measured under phase-correlated ...
International audienceWe study theoretically gain recovery dynamics in a semiconductor optical ampli...
Recent pump probe measurements of the fast optical response of semiconductor laser amplifiers are mo...
Recombination processes of excess carriers play a key role in optoelectronic device operation and th...
We present experimental and theoretical results on ultrafast nonlinear dynamics in InGaAsP semicondu...
Abstract—We investigate nonlinear carrier dynamics in a multiquantum-well semiconductor optical ampl...
The gain and index dynamics of a QD amplifier operating at 1.55 mum are characterized via heterodyne...