Electromigration (EM) is a key reliability concern in chip power/ ground (p/g) grids, which has been exacerbated by the high current levels and narrow metal lines in modern grids. EM checking is expensive due to the large sizes of modern p/g grids and is also inherently difficult due to the complex nature of the EM phenomenon. Traditional EM checking is based on empirical models, but better models are needed for accurate prediction due to the very small margins between the allowed failure rates (spec) and the failure rates at which the chips actually operate in the field. Thus, recent more accurate physics-based EM models have been proposed, which remain computationally expensive because they require solution of a system of partial differen...
Reliability has become a more serious design challenge for current nanometer very- large- scale inte...
Electromigration (EM) is becoming a progressively severe reliability challenge due to increased inte...
Electromigration is the phenomenon of metal ion mass transport along the grain boundaries when a met...
Electromigration (EM) is a key reliability concern in chip power/ ground (p/g) grids, which has been...
Electromigration in metal lines has re-emerged as a significant concern in modern VLSI circuits. The...
Long-term reliability is a major concern in modern VLSI design. Literature has shown that reliabilit...
Electromigration is re-emerging as a significant problem in modern integrated circuits (IC). Especia...
Electromigration (EM) is a major reliability concern in modern chip design, especially due to contin...
As technology scales into smaller feature sizes, electromigration (EM) has become a progressively se...
International audienceA recently proposed methodology for electromigration (EM) assessment in on-chi...
Abstract — Electromigration (EM), a growing problem in on-chip in-terconnects, can cause wire resist...
International audienceWe present a reliability study of power grids in power-gated chips. We investi...
Electromigration (EM) is a mass transport phenomenon resulting from the momentum transfer between th...
For practical testing and detection of electromigration (EM) induced failures in dual damascene copp...
Even after the successful introduction of Cu-based metallization, the electromigration (EM) failure ...
Reliability has become a more serious design challenge for current nanometer very- large- scale inte...
Electromigration (EM) is becoming a progressively severe reliability challenge due to increased inte...
Electromigration is the phenomenon of metal ion mass transport along the grain boundaries when a met...
Electromigration (EM) is a key reliability concern in chip power/ ground (p/g) grids, which has been...
Electromigration in metal lines has re-emerged as a significant concern in modern VLSI circuits. The...
Long-term reliability is a major concern in modern VLSI design. Literature has shown that reliabilit...
Electromigration is re-emerging as a significant problem in modern integrated circuits (IC). Especia...
Electromigration (EM) is a major reliability concern in modern chip design, especially due to contin...
As technology scales into smaller feature sizes, electromigration (EM) has become a progressively se...
International audienceA recently proposed methodology for electromigration (EM) assessment in on-chi...
Abstract — Electromigration (EM), a growing problem in on-chip in-terconnects, can cause wire resist...
International audienceWe present a reliability study of power grids in power-gated chips. We investi...
Electromigration (EM) is a mass transport phenomenon resulting from the momentum transfer between th...
For practical testing and detection of electromigration (EM) induced failures in dual damascene copp...
Even after the successful introduction of Cu-based metallization, the electromigration (EM) failure ...
Reliability has become a more serious design challenge for current nanometer very- large- scale inte...
Electromigration (EM) is becoming a progressively severe reliability challenge due to increased inte...
Electromigration is the phenomenon of metal ion mass transport along the grain boundaries when a met...