Solution-processed semiconductors for next-generation photodetectors

Efficient light detection is central to modern science and technology. Today’s photodetectors are based principally on photodiodes made from crystalline inorganic elemental semiconductors such as silicon, and also compound semiconductors such as III-Vs. Photodetectors comprised of solution-processed semiconductors have recently emerged as candidates for next-generation light sensing. They combine ease of processing, facile integration with CMOS, compatibility with flexible substrates, and encouraging progress in performance. Recent advances and remaining challenges in solution-processed photodetectors are reviewed herein from both a materials and device perspective. Hybrid phototransistors and their potential to decouple prior trade-offs in noise vs. gain vs. speed are discussed. We update on rapid advances in metal halide perovskite photodiodes and feature their recent application in narrowband filter-less photodetection. We conclude with a summary of emerging avenues enabled by synergistic combinations of materials and device engineering