grantor: University of TorontoLateral Current Injection (LCI) lasers and the Integrated Split-Electrode Laser Modulators (SELM) are fabricated in the GaAs/AlxGa1-x As/In0.1Ga0.9As material system. The effect of lateral leakage current on the threshold current of LCI devices is studied in detail. The simulation results based on a simple, but informative modeling of temperature dependence of threshold current are compared against experimental results to further advance the understanding of internal operation mechanism of LCI devices. The SELM is successfully fabricated and its concept proven. Modulation and output extinction measurements show the SELM is working in the way that it is intended. Consideration of the rate equations rev...
The effect of lateral carrier diffusion upon the modulation characteristics of the semiconductor las...
96 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2001.High-speed laser sources are c...
The first hot electron injection laser (HEL), a vertically integrated transistor-laser structure, is...
grantor: University of TorontoLateral Current Injection (LCI) lasers and the Integrated Sp...
grantor: University of TorontoThe theory of the lateral current injection (LCI) laser is d...
grantor: University of TorontoThe topological degree of freedom of the lateral current inj...
By comparing theoretical prediction with experimental performance, we gain insight into the physical...
Low‐threshold GaAs‐GaAlAs lasers operating in a stable single mode have been fabricated using latera...
The application of appropriately shaped injection current fronts to the transition between two logic...
Bibliography: p. 215-231.v, 231 p. ; ill. ; 30 cm.This thesis investigates the behaviour of semicond...
The threshold of a VSIS laser diode is described using general models for the bidimensional optical ...
There is an increasing need for tuneable spectrally pure semiconductor laser sources as well as broa...
We compare experimental data with three-dimensional numerical calculations of the local minority cur...
An external modulator model is proposed to analyze the optical injection-locked semiconductor lasers...
Abstract—We carry out a detailed characterization of CW threshold behaviour of Coupled-Cavity VCSELs...
The effect of lateral carrier diffusion upon the modulation characteristics of the semiconductor las...
96 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2001.High-speed laser sources are c...
The first hot electron injection laser (HEL), a vertically integrated transistor-laser structure, is...
grantor: University of TorontoLateral Current Injection (LCI) lasers and the Integrated Sp...
grantor: University of TorontoThe theory of the lateral current injection (LCI) laser is d...
grantor: University of TorontoThe topological degree of freedom of the lateral current inj...
By comparing theoretical prediction with experimental performance, we gain insight into the physical...
Low‐threshold GaAs‐GaAlAs lasers operating in a stable single mode have been fabricated using latera...
The application of appropriately shaped injection current fronts to the transition between two logic...
Bibliography: p. 215-231.v, 231 p. ; ill. ; 30 cm.This thesis investigates the behaviour of semicond...
The threshold of a VSIS laser diode is described using general models for the bidimensional optical ...
There is an increasing need for tuneable spectrally pure semiconductor laser sources as well as broa...
We compare experimental data with three-dimensional numerical calculations of the local minority cur...
An external modulator model is proposed to analyze the optical injection-locked semiconductor lasers...
Abstract—We carry out a detailed characterization of CW threshold behaviour of Coupled-Cavity VCSELs...
The effect of lateral carrier diffusion upon the modulation characteristics of the semiconductor las...
96 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2001.High-speed laser sources are c...
The first hot electron injection laser (HEL), a vertically integrated transistor-laser structure, is...