Lateral current injection s-laser with ion-implanted lateral heterobarriers

grantor: University of TorontoThe topological degree of freedom of the lateral current injection (LCI) laser was explored for the first time. Various LCI s-laser devices having a raised-cosine lateral variation of the ridge waveguide were designed and fabricated in the GaAs/AlxGa1-x As/In0.1Ga0.9As material system. Lateral heterobarriers and contacts were defined simultaneously through ion-implantation. The LCI s-laser concept was successfully proven: a device with a 200 [mu]m transition length and 2 [mu]m waveguide ridge width lased at 831 nm with a threshold of 6.1 mA at 100 K. Based on the insight gained in this work, a new fabrication technique is suggested in order to improve device performance. The pursuit of novel functional devices-for example, an LCI y-laser--which build on the discoveries made in this work is proposed.M.A.Sc