Oxynitride gate dielectrics for deep sub-micron MOS devices

grantor: University of TorontoThe continuous demand for improved CMOS transistors necessitate smaller device dimensions. The reduction in chip size into the deep sub-micron dimensions opens up new scientific and engineering challenges. One of the most critical material in developing deep sub-micron MOS transistors is high quality ultrathin (~ a few nm) gate dielectric film. As the gate dielectric thickness is reduced to below the 3 nm mark, the conventionally used SiO2 creditability as a dielectric layer deteriorates. The incorporation of nitrogen atoms into the dielectric has been shown to improve its characteristics: by reducing defect generation at the Si-SiO2 interface when incorporated at monolayer levels and reducing boron penetration from p+ poly-silicon gate electrodes through the dielectric films. The function of SiO2 as an insulating layer for thickness