We propose a new design of semiconductor quantum-well heterostructures, which can be used to improve the performance of monolithic mode-locked diode lasers and all-optical signal-processing devices with gain and saturable absorber sections. Numerical modeling shows that this design can increase the carrier sweep-out rate from the absorber section by several orders of magnitude, while retaining high carrier confinement on the ground level making for efficient signal amplification by the gain sections
AbstractThe passive sections of a monolithic device must have a wider bandgap than the active region...
The state filling effect has been suggested as a source responsible for the degradation of modulatio...
(DFB) lasers and optical amplifiers will be theoretically analyzed in this paper. For DFB lasers, a ...
The research presented in this thesis describes how monolithic opto-electronic integration using qua...
The research presented in this thesis describes how monolithic opto-electronic integration using qua...
We present the design of a widely tunable monolithic source on GaAs/AlGaAs. It consists of a quantum...
AbstractThe passive sections of a monolithic device must have a wider bandgap than the active region...
The passive sections of a monolithic device must have a wider bandgap than the active regions to red...
The passive sections of a monolithic device must have a wider bandgap than the active regions to red...
Passive mode-locking in semiconductor lasers in a Fabry-Perot configuration with a bandgap blueshift...
Quantum well devices feature very thin epitaxial layers of heterostructure III-V and II-VI semicondu...
We report a novel approach for increasing the output power in passively mode locked semiconductor la...
This paper reports the effects of variation of number of quantum wells in material gain characterist...
This paper reports the effects of variation of number of quantum wells in material gain characterist...
Recently, there is an increasing interest onquantum well (QW) semiconductor optical amplifier in opt...
AbstractThe passive sections of a monolithic device must have a wider bandgap than the active region...
The state filling effect has been suggested as a source responsible for the degradation of modulatio...
(DFB) lasers and optical amplifiers will be theoretically analyzed in this paper. For DFB lasers, a ...
The research presented in this thesis describes how monolithic opto-electronic integration using qua...
The research presented in this thesis describes how monolithic opto-electronic integration using qua...
We present the design of a widely tunable monolithic source on GaAs/AlGaAs. It consists of a quantum...
AbstractThe passive sections of a monolithic device must have a wider bandgap than the active region...
The passive sections of a monolithic device must have a wider bandgap than the active regions to red...
The passive sections of a monolithic device must have a wider bandgap than the active regions to red...
Passive mode-locking in semiconductor lasers in a Fabry-Perot configuration with a bandgap blueshift...
Quantum well devices feature very thin epitaxial layers of heterostructure III-V and II-VI semicondu...
We report a novel approach for increasing the output power in passively mode locked semiconductor la...
This paper reports the effects of variation of number of quantum wells in material gain characterist...
This paper reports the effects of variation of number of quantum wells in material gain characterist...
Recently, there is an increasing interest onquantum well (QW) semiconductor optical amplifier in opt...
AbstractThe passive sections of a monolithic device must have a wider bandgap than the active region...
The state filling effect has been suggested as a source responsible for the degradation of modulatio...
(DFB) lasers and optical amplifiers will be theoretically analyzed in this paper. For DFB lasers, a ...