Promising Approach to Achieving a Large Exchange Bias Effect in Bulk Materials with Small Cooling Fields

The exchange bias effect is pivotal in semiconductor technology, particularly for magnetic recording and spin valve devices. However, conventional materials that rely on interfaces present manufacturing challenges. This study focuses on the exchange bias effect in bulk materials without interfaces. A novel magnetic material, Cd2FeOsO6, was synthesized, exhibiting a strong exchange bias effect at low-cooling magnetic fields. This study offers insights into materials with pronounced exchange bias and a unique mechanism. Cd2FeOsO6 demonstrates ferrimagnetic ordering and hard magnetism below 285 K. Notably, a substantial 10 kOe exchange bias arises with a weak 80 Oe magnetic field. This effect is likely due to partial ordering and strong spin–orbit coupling of the ligand of Os. These findings highlight the potential of double perovskite materials for notable exchange bias effects at room temperature with modest cooling fields. Leveraging 5d element properties advances bulk materials with enhanced exchange bias traits